Editing Photodiode (section)

===Comparison with photomultipliers===

Advantages compared to [[photomultiplier]]s:<ref>[http://sales.hamamatsu.com/assets/html/ssd/si-photodiode/index.htm Photodiode Technical Guide] {{Webarchive|url=https://web.archive.org/web/20070104122603/http://sales.hamamatsu.com/assets/html/ssd/si-photodiode/index.htm |date=2007-01-04 }} on Hamamatsu website</ref>

# Excellent linearity of output current as a function of incident light
# Spectral response from 190&nbsp;nm to 1100&nbsp;nm ([[silicon]]), longer [[wavelength]]s with other [[semiconductor materials]]
# Low noise
# Ruggedized to mechanical stress
# Low cost
# Compact and light weight
# Long lifetime
# High [[quantum efficiency]], typically 60–80%<ref>Knoll, F.G. (2010). ''Radiation detection and measurement'', 4th ed. Wiley, Hoboken, NJ. p. 298. {{ISBN|978-0-470-13148-0}}</ref>
# No high voltage required

Disadvantages compared to [[photomultiplier]]s:

# Small area
# No internal gain (except [[avalanche photodiode]]s, but their gain is typically 10<sup>2</sup>–10<sup>3</sup> compared to 10<sup>5</sup>-10<sup>8</sup> for the photomultiplier)
# Much lower overall sensitivity
# Photon counting only possible with specially designed, usually cooled photodiodes, with special electronic circuits
# Response time for many designs is slower
# Latent effect