Editing SPICE (section)

=== Device models ===
SPICE2 includes many semiconductor device [[transistor models|compact models]]: three levels of [[MOSFET]] model, a combined [[Ebers-Moll model|Ebers–Moll]] and [[Gummel–Poon model|Gummel–Poon bipolar model]], a [[JFET]] model, and a model for a [[diode|junction diode]]. In addition, it had many other elements: resistors, capacitors, inductors (including [[Inductance#Coupled inductors|coupling]]), independent [[voltage source|voltage]] and [[current source]]s, ideal [[transmission line]]s, active components and voltage and current controlled sources.

SPICE3 added more sophisticated MOSFET models, which were needed due to advances in semiconductor technology.
In particular, the [[BSIM]] family of models were added, which were also developed at UC Berkeley.

Commercial and industrial SPICE simulators have added many other device models as technology advanced and earlier models became inadequate. To attempt standardization of these models so that a set of model parameters may be used in different simulators, an industry working group was formed, the [[Compact Model Council]],<ref>{{cite web|url=http://www.geia.org/index.asp?bid=597 |title=CMC - Compact Model Council |publisher=GEIA |url-status=dead |archive-url=https://web.archive.org/web/20110511071827/http://www.geia.org/index.asp?bid=597 |archive-date=May 11, 2011 }}</ref> to choose, maintain and promote the use of standard models.  The standard models today include [http://www-device.eecs.berkeley.edu/bsim/?page=BSIM3 BSIM3], [http://www-device.eecs.berkeley.edu/bsim/?page=BSIM4 BSIM4], [https://web.archive.org/web/20150224064144/http://www-device.eecs.berkeley.edu/bsim/?page=BSIMSOI BSIMSOI], [https://web.archive.org/web/20071017140132/http://pspmodel.asu.edu/ PSP], [http://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_start.html HICUM], and [https://www.eng.auburn.edu/~niuguof/mextram/index.html MEXTRAM].

Spice can use device models from foundry [[Process design kit|PDKs]].