Editing Insulated-gate bipolar transistor (section)

==Modeling==
Circuits with IGBTs can be developed and [[computer modeling|modeled]] with various [[electronic circuit simulation|circuit simulating]] computer programs such as [[SPICE]], [[Saber (software)|Saber]], and other programs. To simulate an IGBT circuit, the device (and other devices in the circuit) must have a model which predicts or simulates the device's response to various voltages and currents on their electrical terminals. For more precise simulations the effect of temperature on various parts of the IGBT may be included with the simulation.
Two common methods of modeling are available: [[semiconductor device physics|device physics]]-based model, [[equivalent circuit]]s or macromodels. [[SPICE]] simulates IGBTs using a macromodel that combines an ensemble of components like [[field-effect transistor|FET]]s and [[bipolar junction transistor|BJT]]s in a [[Darlington transistor|Darlington configuration]].{{Citation needed|date=September 2007}} An alternative physics-based model is the Hefner model, introduced by Allen Hefner of the [[National Institute of Standards and Technology]]. Hefner's model is fairly complex but has shown good results. Hefner's model is described in a 1988 paper and was later extended to a thermo-electrical model which include the IGBT's response to internal heating. This model has been added to a version of the [[Saber (software)|Saber]] simulation software.<ref>{{cite journal |last1=Hefner |first1=A.R. |last2=Diebolt |first2=D.M. |title=An experimentally verified IGBT model implemented in the Saber circuit simulator |journal=IEEE Transactions on Power Electronics |date=September 1994 |volume=9 |issue=5 |pages=532–542 |doi=10.1109/63.321038 |bibcode=1994ITPE....9..532H |s2cid=53487037 }}</ref>