Editing Czochralski method (section)

== Crystal sizes==

[[Image:Silicon grown by Czochralski process 1956.jpg|thumb|240px|Silicon crystal being grown by the Czochralski method at Raytheon, 1956. The [[induction heating]] coil is visible, and the end of the crystal is just emerging from the melt. The technician is measuring the temperature with an [[optical pyrometer]]. The crystals produced by this early apparatus, used in an early Si plant, were only one inch in diameter.]]

Due to efficiencies of scale, the semiconductor industry often uses wafers with standardized dimensions, or common [[wafer (electronics)|wafer]] specifications. Early on, boules were small, a few centimeters wide. With advanced technology, high-end device manufacturers use 200&nbsp;mm and 300&nbsp;mm diameter wafers. Width is controlled by precise control of temperature, speeds of rotation, and the speed at which the seed holder is withdrawn. The crystal ingots from which wafers are sliced can be up to 2 metres in length, weighing several hundred kilograms. Larger wafers allow improvements in manufacturing efficiency, as more chips can be fabricated on each wafer, with lower relative loss, so there has been a steady drive to increase silicon wafer sizes. The next step up, 450&nbsp;mm, was scheduled for introduction in 2018.<ref>{{Cite web |last=Manners |first=David |date=2013-12-30 |title=Doubts over 450mm and EUV |url=https://www.electronicsweekly.com/news/business/finance/doubts-over-450mm-and-euv-2013-12/ |access-date=2014-01-09 |website=Electronics Weekly |language=en}}</ref> Silicon wafers are typically about 0.2–0.75&nbsp;mm thick, and can be polished to great flatness for making [[integrated circuit]]s or textured for making [[solar cell]]s.