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====Metal-oxide-semiconductor==== {{Main|MOSFET}} {{See also|List of semiconductor scale examples|Transistor count}} [[File:Threshold formation nowatermark.gif|thumb|right|400px|Operation of a [[MOSFET]] and its Id-Vg curve. At first, when no gate voltage is applied. There is no inversion electron in the channel, the device is OFF. As gate voltage increase, the inversion electron density in the channel increase, the current increases, and the device turns on.]] The [[MOSFET|metal-oxide-semiconductor FET]] (MOSFET, or MOS transistor), a [[solid-state electronics|solid-state]] device, is by far the most used widely semiconductor device today. It accounts for at least 99.9% of all transistors, and there have been an estimated 13{{nbsp}}[[sextillion]] MOSFETs manufactured between 1960 and 2018.<ref name="computerhistory2018">{{cite web |title=13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History |url=https://www.computerhistory.org/atchm/13-sextillion-counting-the-long-winding-road-to-the-most-frequently-manufactured-human-artifact-in-history/ |date=April 2, 2018 |website=[[Computer History Museum]] |access-date=28 July 2019}}</ref> The ''gate'' electrode is charged to produce an electric field that controls the [[electrical conductivity|conductivity]] of a "channel" between two terminals, called the ''source'' and ''drain''. Depending on the type of carrier in the channel, the device may be an ''n-channel'' (for electrons) or a ''p-channel'' (for holes) MOSFET. Although the MOSFET is named in part for its "metal" gate, in modern devices [[polysilicon]] is typically used instead.
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