Editing Gallium arsenide (section)

===GaAs digital logic===
GaAs can be used for various transistor types:<ref name="Fisher1995">{{cite book |author1=Dennis Fisher |url=https://books.google.com/books?id=KSKJ56kvcSYC&q=source-coupled-fet-logic&pg=PA61 |title=Gallium Arsenide IC Applications Handbook |author2=I. J. Bahl |publisher=Elsevier |year=1995 |isbn=978-0-12-257735-2 |volume=1 |page=61}} 'Clear search' to see pages</ref>
* [[Metal–semiconductor field-effect transistor]] (MESFET)
* [[High-electron-mobility transistor]] (HEMT)
* [[Junction field-effect transistor]] (JFET)
* [[Heterojunction bipolar transistor]] (HBT)
* [[Metal–oxide–semiconductor field-effect transistor]] (MOSFET)<ref>{{cite book |last1=Ye |first1=Peide D. |title=Fundamentals of III-V Semiconductor MOSFETs |last2=Xuan |first2=Yi |last3=Wu |first3=Yanqing |last4=Xu |first4=Min |date=2010 |publisher=[[Springer Science & Business Media]] |isbn=978-1-4419-1547-4 |editor-last1=Oktyabrsky |editor-first1=Serge |pages=173–194 |chapter=Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model |doi=10.1007/978-1-4419-1547-4_7 |editor-last2=Ye |editor-first2=Peide |chapter-url=https://books.google.com/books?id=sk2SrZH3xEcC&pg=PA173}}</ref>

The HBT can be used in [[integrated injection logic]] (I<sup>2</sup>L).

The earliest GaAs logic gate used Buffered FET Logic (BFL).<ref name="Fisher1995" />

From {{circa|1975}} to 1995 the main logic families used were:<ref name="Fisher1995" />
* Source-coupled FET logic (SCFL) fastest and most complex, (used by TriQuint & Vitesse)
* Capacitor–diode FET logic (CDFL) (used by Cray for [[Cray-3]])
* Direct-coupled FET logic (DCFL) simplest and lowest power (used by Vitesse for VLSI gate arrays)