Editing Gallium (section)

===Nitrides and pnictides===
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|image1= Crystal-GaN.jpg
|image2= Gallium Arsenide (GaAs) 2" wafer.jpg
|footer= Gallium nitride (left) and gallium arsenide (right) wafers
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Gallium reacts with ammonia at 1050&nbsp;°C to form [[gallium nitride]], GaN. Gallium also forms binary compounds with [[phosphorus]], [[arsenic]], and [[antimony]]: [[gallium phosphide]] (GaP), [[gallium arsenide]] (GaAs), and [[gallium antimonide]] (GaSb). These compounds have the same structure as [[zinc sulfide|ZnS]], and have important [[semiconductor|semiconducting]] properties.<ref name="wiberg_holleman" />{{rp|1034}} GaP, GaAs, and GaSb can be synthesized by the direct reaction of gallium with elemental phosphorus, arsenic, or antimony.<ref name="emeleus_sharpe" />{{rp|99}} They exhibit higher electrical conductivity than GaN.<ref name="emeleus_sharpe" />{{rp|101}} GaP can also be synthesized by reacting {{chem|Ga|2|O}} with phosphorus at low temperatures.<ref>{{cite book |title= Inorganic Chemistry |author= Michelle Davidson |publisher= Lotus Press |date= 2006 |isbn= 978-81-89093-39-6 |page= 90}}</ref>

Gallium forms ternary [[nitride]]s; for example:<ref name="emeleus_sharpe" />{{rp|99}}
:{{chem|Li|3|Ga}} + {{chem|N|2}} → {{chem|Li|3|GaN|2}}

Similar compounds with phosphorus and arsenic are possible: {{chem|Li|3|GaP|2}} and {{chem|Li|3|GaAs|2}}. These compounds are easily hydrolyzed by dilute [[acid]]s and water.<ref name="emeleus_sharpe" />{{rp|101}}