Editing JFET (section)

== Comparison with other transistors ==
At room temperature, JFET gate current (the reverse leakage of the gate-to-channel [[P-n junction|junction]]) is comparable to that of a [[MOSFET]] (which has insulating oxide between gate and channel), but much less than the base current of a [[bipolar junction transistor]].  The JFET has higher gain ([[transconductance]]) than the MOSFET, as well as lower [[flicker noise]], and is therefore used in some low-[[Noise (physics)|noise]], high input-impedance [[Operational amplifier|op-amps]]. Additionally the JFET is less susceptible to damage from static charge buildup.<ref>{{Cite web |last=Kopp |first=Emilie |date=2019-01-16 |title=What's the difference between a MOSFET and a JFET? |url=https://www.powerelectronictips.com/whats-difference-between-a-mosfet-jfet-faq/ |url-status=live |archive-url=https://web.archive.org/web/20210517223931/https://www.powerelectronictips.com/whats-difference-between-a-mosfet-jfet-faq/ |archive-date=2021-05-17 |access-date=2022-06-16 |website=Power Electronic Tips}}</ref>