Editing Boron nitride (section)

=== Functionalization and Heterostructures ===
Modifications of hexagonal boron nitride have led to novel materials like hBNCF, a vertical heterostructure involving [[graphene]] and [[hexagonal boron nitride|h-BN]] functionalized with [[fluorine]]. This material, synthesized from h-BN via graphitization and fluorination, was found to exhibit room-temperature [[ferromagnetism]]. Crucially, [[Magnetic Force Microscopy]] (MFM), a specialized mode of [[Atomic Force Microscopy|AFM]], was employed to investigate the magnetic properties at the nanoscale. These MFM studies confirmed the ferromagnetic nature of the hBNCF powder. Furthermore, the MFM analysis provided evidence that the observed magnetism was intrinsic to the hBNCF structure, helping to exclude extrinsic [[magnetic impurity|metallic magnetic impurities]] as the origin.<ref name="Sahoo2021hBNCF">{{cite journal | last1=Sahoo | first1=Krishna Rani | last2=Sharma | first2=Rahul | last3=Bawari | first3=Sumit | last4=Vivek | first4=S. | last5=Rastogi | first5=Pankaj Kumar | last6=Nair | first6=Swapna S. | last7=Grage | first7=Stephan L. | last8=Narayanan | first8=Tharangattu N. | title=Room-temperature ferromagnetic wide bandgap semiconducting fluorinated Graphene-hBN vertical heterostructures | journal=Materials Today Physics | volume=21 | pages=100547 | year=2021 | doi=10.1016/j.mtphys.2021.100547 | issn=2542-5293}}</ref> The material was also characterized as a wide [[band gap]] semiconductor (~3.89 eV) with potential applications as an [[MRI contrast agent]].<ref name="Sahoo2021hBNCF"/>