Editing Hydrogen (section)

=== Semiconductor industry ===
Hydrogen is employed to saturate broken ("dangling") bonds of [[amorphous silicon]] and [[amorphous carbon]] that helps stabilizing material properties.<ref>{{cite journal
|last1=Le Comber| first1=P. G.
|title=Hall effect and impurity conduction in substitutionally doped amorphous silicon
|journal=Philosophical Magazine|doi=10.1080/14786437708232943
|volume=35
|issue=5
|pages=1173–1187
|date=1977
|last2=Jones
|first2=D. I.
|last3=Spear
|first3=W. E.|bibcode = 1977PMag...35.1173C }}</ref> Hydrogen, introduced as a unintended side-effect of production, acts as a shallow [[electron donor]] leading to [[N-type semiconductor|n-type]] conductivity in [[ZnO]], with important uses in [[transducers]] and [[phosphors]].<ref>{{cite journal|last=Van de Walle|first=C. G.|title=Hydrogen as a cause of doping in zinc oxide|journal=Physical Review Letters|volume=85|issue=5|doi=10.1103/PhysRevLett.85.1012|pages=1012–1015|date=2000|pmid=10991462|bibcode=2000PhRvL..85.1012V|hdl=11858/00-001M-0000-0026-D0E6-E|url=http://pubman.mpdl.mpg.de/pubman/item/escidoc:741885/component/escidoc:932688/PRL-85-1012-2000.pdf|access-date=1 August 2018|archive-url=https://web.archive.org/web/20170815000602/http://pubman.mpdl.mpg.de/pubman/item/escidoc:741885/component/escidoc:932688/PRL-85-1012-2000.pdf|archive-date=15 August 2017|url-status=live|hdl-access=free}}</ref><ref>{{Cite journal |last1=Spencer |first1=Joseph A. |last2=Mock |first2=Alyssa L. |last3=Jacobs |first3=Alan G. |last4=Schubert |first4=Mathias |last5=Zhang |first5=Yuhao |last6=Tadjer |first6=Marko J. |date=2022-03-04 |title=A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 |url=https://pubs.aip.org/aip/apr/article-abstract/9/1/011315/2835450/A-review-of-band-structure-and-material-properties |journal=Applied Physics Reviews |volume=9 |issue=1 |pages=011315 |doi=10.1063/5.0078037 |issn=1931-9401}}</ref> Detailed analysis of ZnO and of [[MgO]] show evidence of four and six-fold hydrogen multicentre bonds.<ref>{{cite journal
|last1=Janotti|first1= A.
|title=Hydrogen multicentre bonds|doi=10.1038/nmat1795
|journal=Nature Materials
|volume=6|pages=44–47
|date=2007
|pmid=17143265
|last2=Van De Walle
|first2=C. G.
|issue=1|bibcode = 2007NatMa...6...44J }}</ref>
The doping behavior of hydrogen varies with the material.<ref>{{cite journal|last1=Kilic|first1=C.|title=n-type doping of oxides by hydrogen|doi=10.1063/1.1482783|journal=Applied Physics Letters|volume=81|issue=1|pages=73–75|date=2002|last2=Zunger|first2=Alex|bibcode=2002ApPhL..81...73K|s2cid=96415065}}</ref><ref>{{cite journal
|last1=Peacock| first1=P. W.|doi=10.1063/1.1609245
|title=Behavior of hydrogen in high dielectric constant oxide gate insulators
|journal=Applied Physics Letters
|volume=83
|issue=10
|pages=2025–2027
|date=2003
|last2=Robertson
|first2=J.
|bibcode = 2003ApPhL..83.2025P }}</ref>