Editing Semiconductor device (section)

====Bipolar junction transistor====
[[File:Bipolar Junction Transistor NPN Structure.svg|right|thumb|180px|An n–p–n bipolar junction transistor structure]]

[[Bipolar junction transistors]] (BJTs) are formed from two p–n junctions, in either n–p–n or p–n–p configuration. The middle, or ''base'', the region between the junctions is typically very narrow. The other regions, and their associated terminals, are known as the ''emitter'' and the ''collector''. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. This creates a much larger current between the collector and emitter, controlled by the base-emitter current.