Editing Nanowire (section)

=== VLS growth ===
A common technique for creating a nanowire is [[vapor–liquid–solid method]] (VLS), which was first reported by Wagner and Ellis in 1964 for silicon whiskers with diameters ranging from hundreds of nm to hundreds of μm.<ref>{{cite journal|last=Wagner |first=R. S.|author2=Ellis, W. C. |year=1964|title=Vapor-liquid-solid mechanism of single crystal growth|journal=Appl. Phys. Lett.|volume=4|issue=5|pages=89|doi=10.1063/1.1753975|bibcode=1964ApPhL...4...89W}}</ref> This process can produce high-quality crystalline nanowires of many semiconductor materials, for example,  VLS–grown single crystalline [[Silicon Nanowire|silicon nanowires (SiNWs)]] with smooth surfaces could have excellent properties, such as ultra-large elasticity.<ref>{{cite journal| last1=Zhang | first1= H. | display-authors=etal |title= Approaching the ideal elastic strain limit in silicon nanowires | journal=Science Advances | year=2016| volume=2 |issue=8| pages=e1501382 | doi=10.1126/sciadv.1501382| pmid= 27540586 | pmc= 4988777 | bibcode=2016SciA....2E1382Z}}</ref> This method uses a source material from either laser [[ablation|ablated]] particles or a feed gas such as [[silane]].

VLS synthesis requires a catalyst. For nanowires, the best catalysts are liquid metal (such as [[gold]]) [[nanocluster]]s, which can either be self-assembled from a thin film by [[dewetting]], or purchased in colloidal form and deposited on a substrate.

The source enters these nanoclusters and begins to saturate them. On reaching supersaturation, the source solidifies and grows outward from the nanocluster. Simply turning off the source can adjust the final length of the nanowire. Switching sources while still in the growth phase can create compound nanowires with super-lattices of alternating materials. For example, a method termed ENGRAVE (Encoded Nanowire GRowth and Appearance through VLS and Etching)<ref>{{cite journal |last1=Christesen |first1=Joseph D. |last2=Pinion |first2=Christopher W. |last3=Grumstrup |first3=Erik M. |last4=Papanikolas |first4=John M. |last5=Cahoon |first5=James F. |title=Synthetically Encoding 10 nm Morphology in Silicon Nanowires |journal=Nano Letters |date=2013-12-11 |volume=13 |issue=12 |pages=6281–6286 |doi=10.1021/nl403909r |pmid=24274858 |bibcode=2013NanoL..13.6281C |issn=1530-6984|doi-access=free }}</ref> developed by the Cahoon Lab at [[University of North Carolina at Chapel Hill|UNC-Chapel Hill]] allows for nanometer-scale morphological control via rapid ''in situ'' dopant modulation.

A single-step vapour phase reaction at elevated temperature synthesises inorganic nanowires such as Mo<sub>6</sub>S<sub>9−''x''</sub>I<sub>''x''</sub>.  From another point of view, such nanowires are cluster [[polymer]]s.

Similar to VLS synthesis, VSS (vapor-solid-solid) synthesis of nanowires (NWs) proceeds through thermolytic decomposition of a silicon precursor (typically phenylsilane). Unlike VLS, the catalytic seed remains in solid state when subjected to high temperature annealing of the substrate. This such type of synthesis is widely used to synthesise metal silicide/germanide nanowires through VSS alloying between a copper substrate and a silicon/germanium precursor.