Editing MOSFET (section)

=== Metal–insulator–semiconductor field-effect transistor (MISFET) ===
Metal–insulator–semiconductor field-effect-transistor,<ref>{{cite web
 | url = http://www.semi1source.com/glossary/default.asp?searchterm=MIS
 | title = MIS
 | work = Semiconductor Glossary
 | access-date = 2017-05-14
 | archive-date = 2017-01-22
 | archive-url = https://web.archive.org/web/20170122153452/http://www.semi1source.com/glossary/default.asp?searchterm=MIS
 | url-status = dead
 }}</ref><ref>
{{cite book
 | title = Semiconducting polymers: chemistry, physics and engineering
 | first1= Georges | last1 = Hadziioannou
 | first2=George G. | last2=Malliaras
 | publisher = Wiley-VCH
 | year = 2007
 | isbn = 978-3-527-31271-9
 | url = https://books.google.com/books?id=D37RykvobWwC&dq=misfet+metal-insulator-semiconductor-field-effect-transistor&pg=PA532
}}</ref><ref name=Jones>
{{cite book
 | title = Organic Molecular Solids: Properties and Applications
 | first = William | last=Jones
 | publisher = CRC Press
 | year = 1997
 | isbn = 978-0-8493-9428-7
 | url = https://books.google.com/books?id=8sb1kwH6EgIC&dq=misfet+metal-insulator-semiconductor-field-effect-transistor&pg=PA350
}}</ref> or ''MISFET'', is a more general term than ''MOSFET'' and a synonym to ''insulated-gate field-effect transistor'' (IGFET). All MOSFETs are MISFETs, but not all MISFETs are MOSFETs.

The gate dielectric insulator in a MISFET is a substrate oxide (hence typically [[silicon dioxide]]) in a MOSFET, but other materials can also be employed. The [[gate dielectric]] lies directly below the [[gate electrode]] and above the [[channel (semiconductor)|channel]] of the MISFET. The term ''metal'' is historically used for the gate material, even though now it is usually [[doping (semiconductor)|highly doped]] [[polysilicon]] or some other [[non-metal]].

Insulator types may be:

* Silicon dioxide, in silicon MOSFETs 
* Organic insulators (e.g., undoped trans-[[polyacetylene]]; [[cyanoethyl]] [[pullulan]], CEP<ref>
{{cite journal
 | url=https://pubs.rsc.org/en/Content/ArticleLanding/2013/TC/C3TC30134F|title=High performance organic field-effect transistors using cyanoethyl pullulan (CEP) high-k polymer cross-linked with trimethylolpropane triglycidyl ether (TTE) at low temperatures
 | journal=Journal of Materials Chemistry C
|volume=1
 |issue=25
 |pages=3955
 |doi=10.1039/C3TC30134F
 |year=2013
 |last1=Xu
 |first1=Wentao
 |last2=Guo
 |first2=Chang
 |last3=Rhee
 |first3=Shi-Woo
 }}</ref>), for organic-based FETs.<ref name=Jones/>