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Synchronous dynamic random-access memory
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=== SGRAM and HBM === {| class="wikitable sortable" style="text-align:center" |+ [[Synchronous graphics random-access memory]] (SGRAM) and [[High Bandwidth Memory]] (HBM) |- ! Date of introduction ! Chip name ! Capacity ([[bit]]s){{binpre}} ! SDRAM type ! Manufacturer(s) ! data-sort-type="number" |[[Semiconductor device fabrication|Process]] ! [[MOSFET]] ! data-sort-type="number" | Area ! {{Abbr|Ref|Reference(s)}} |- |{{sort|1994|November 1994}} |HM5283206 |8 Mbit |[[SGRAM]] ([[SDR SDRAM|SDR]]) |[[Hitachi]] |[[350 nm]] |[[CMOS]] |58 mm<sup>2</sup> |<ref name="HM5283206">{{cite book |title=HM5283206 Datasheet |url=https://www.datasheetarchive.com/pdf/download.php?id=d740571591400628c124d16f943c9f96145441&type=M&term=HM5283206 |publisher=[[Hitachi]] |date=11 November 1994 |access-date=10 July 2019}}</ref><ref>{{cite web |title=Hitachi HM5283206FP10 8Mbit SGRAM |url=http://smithsonianchips.si.edu/ice/cd/9702_529.pdf |archive-url=https://web.archive.org/web/20030716101100/http://smithsonianchips.si.edu/ice/cd/9702_529.pdf |archive-date=2003-07-16 |url-status=live |website=[[Smithsonian Institution]] |access-date=10 July 2019}}</ref> |- |{{sort|1994|December 1994}} |μPD481850 |8 Mbit |SGRAM (SDR) |[[NEC]] |{{?}} |CMOS |280 mm<sup>2</sup> |<ref name="D481850">{{cite book |title=μPD481850 Datasheet |url=https://www.datasheetarchive.com/pdf/download.php?id=96dd7345eb44f58adee424725f8fa65f48c794&type=O |publisher=[[NEC]] |date=6 December 1994 |access-date=10 July 2019}}</ref><ref name="nec1995">{{cite book |title=NEC Application Specific Memory |date=Fall 1995 |publisher=[[NEC]] |page=[https://archive.org/details/bitsavers_necdataBoonSpecificMemory_23148799/page/n365 359] |url=https://archive.org/details/bitsavers_necdataBoonSpecificMemory_23148799 |access-date=21 June 2019}}</ref> |- |1997 |μPD4811650 |16 Mbit |SGRAM (SDR) |NEC |350 nm |CMOS |280 mm<sup>2</sup> |<ref>{{cite book |title=UPD4811650 Datasheet |url=https://www.datasheetarchive.com/pdf/download.php?id=74d301b62a3253e6f3e4ff722cad1e9cb1ac90&type=P |publisher=[[NEC]] |date=December 1997 |access-date=10 July 2019}}</ref><ref>{{cite journal |last1=Takeuchi |first1=Kei |title=16M-BIT SYNCHRONOUS GRAPHICS RAM: μPD4811650 |journal=NEC Device Technology International |date=1998 |issue=48 |url=https://www.datasheetarchive.com/pdf/download.php?id=5fde91b774d1f298423c9d3ae6982f843a4df7&type=P |access-date=10 July 2019}}</ref> |- |{{sort|1998|September 1998}} |{{?}} |16 Mbit |SGRAM ([[GDDR]]) |[[Samsung Electronics|Samsung]] |{{?}} |CMOS |{{?}} |<ref name="samsung98"/> |- |1999 |KM4132G112 |32 Mbit |SGRAM (SDR) |Samsung |{{?}} |CMOS |280 mm<sup>2</sup> |<ref>{{cite news |title=Samsung Announces the World's First 222 MHz 32Mbit SGRAM for 3D Graphics and Networking Applications |url=https://www.samsung.com/semiconductor/insights/news-events/samsung-announces-the-worlds-first-222-mhz-32mbit-sgram-for-3d-graphics-and-networking-application/ |access-date=10 July 2019 |work=[[Samsung Semiconductor]] |publisher=[[Samsung]] |date=12 July 1999}}</ref> |- |2002 |{{?}} |128 Mbit |SGRAM ([[GDDR2]]) |Samsung |{{?}} |CMOS |{{?}} |<ref name="samsung2003">{{cite news |title=Samsung Electronics Announces JEDEC-Compliant 256Mb GDDR2 for 3D Graphics |url=https://www.samsung.com/semiconductor/insights/news-events/samsung-electronics-announces-jedec-compliant-256mb-gddr2-for-3d-graphics/ |access-date=26 June 2019 |work=[[Samsung Electronics]] |publisher=[[Samsung]] |date=28 August 2003}}</ref> |- |rowspan="2" | 2003 |rowspan="2" | {{?}} |rowspan="2" | 256 Mbit |SGRAM (GDDR2) |rowspan="2" | Samsung |rowspan="2" | {{?}} |rowspan="2" | CMOS |rowspan="2" | {{?}} |rowspan="2" | <ref name="samsung2003"/> |- |SGRAM ([[GDDR3]]) |- |{{sort|2005|March 2005}} |K4D553238F |256 Mbit |SGRAM (GDDR) |Samsung |{{?}} |CMOS |77 mm<sup>2</sup> |<ref>{{cite web |title=K4D553238F Datasheet |url=https://www.datasheetarchive.com/pdf/download.php?id=cbbd25bf58d1232267a54268161c1af804dc2f&type=P |publisher=[[Samsung Electronics]] |date=March 2005 |access-date=10 July 2019}}</ref> |- |{{sort|2005|October 2005}} |{{?}} |256 Mbit |SGRAM ([[GDDR4]]) |Samsung |{{?}} |CMOS |{{?}} |<ref>{{cite web |title=Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM |url=https://www.samsung.com/semiconductor/insights/news-events/samsung-electronics-develops-industrys-first-ultra-fast-gddr4-graphics-dram/ |website=[[Samsung Semiconductor]] |publisher=[[Samsung]] |access-date=8 July 2019 |date=October 26, 2005}}</ref> |- |2005 |{{?}} |512 Mbit |SGRAM (GDDR4) |[[Hynix]] |{{?}} |rowspan="3" | CMOS |rowspan="3" | {{?}} |rowspan="3" | <ref name="hynix2000s"/> |- |2007 |{{?}} |1024 Mbit |SGRAM ([[GDDR5]]) |Hynix |[[65 nanometer|60 nm]] |- |2009 |{{?}} |2048 Mbit |SGRAM (GDDR5) |Hynix |[[45 nanometer|40 nm]] |- |2010 |K4W1G1646G |1024 Mbit |SGRAM (GDDR3) |Samsung |{{?}} |CMOS |100 mm<sup>2</sup> |<ref>{{cite web |title=K4W1G1646G-BC08 Datasheet |url=https://www.datasheet.directory/index.php?title=Special:PdfViewer&url=https%3A%2F%2Fdatasheet.iiic.cc%2Fdatasheets-1%2Fsamsung_semiconductor_division%2FK4W1G1646G-BC08.pdf |archive-url=https://web.archive.org/web/20220124234650/https://datasheet.iiic.cc/datasheets-1/samsung_semiconductor_division/K4W1G1646G-BC08.pdf |archive-date=2022-01-24 |url-status=live |publisher=[[Samsung Electronics]] |date=November 2010 |access-date=10 July 2019}}</ref> |- |2012 |{{?}} |4096 Mbit |SGRAM (GDDR3) |rowspan="2" | [[SK Hynix]] |rowspan="2" | {{?}} |rowspan="2" | CMOS |rowspan="2" | {{?}} |rowspan="2" | <ref name="hynix2010s"/> |- |2013 |{{?}} |{{?}} |[[High Bandwidth Memory|HBM]] |- |{{sort|2016|March 2016}} |MT58K256M32JA |8 Gbit |SGRAM ([[GDDR5X]]) |[[Micron Technology|Micron]] |20 nm |CMOS |140 mm<sup>2</sup> |<ref>{{cite news |last1=Shilov |first1=Anton |title=Micron Begins to Sample GDDR5X Memory, Unveils Specs of Chips |url=https://www.anandtech.com/show/10193/micron-begins-to-sample-gddr5x-memory |access-date=16 July 2019 |work=[[AnandTech]] |date=March 29, 2016}}</ref> |- |{{sort|2016|June 2016}} |{{?}} |32 Gbit |[[HBM2]] |Samsung |[[20 nm]] |CMOS |{{?}} |<ref name="Shilov2017">{{cite news |last1=Shilov |first1=Anton |title=Samsung Increases Production Volumes of 8 GB HBM2 Chips Due to Growing Demand |url=https://www.anandtech.com/show/11643/samsung-increases-8gb-hbm2-production-volume |access-date=29 June 2019 |work=[[AnandTech]] |date=July 19, 2017}}</ref><ref>{{cite web |title=HBM |url=https://samsungsemiconductor-us.com/hbm/ |website=[[Samsung Semiconductor]] |publisher=[[Samsung]] |access-date=16 July 2019}}</ref> |- |2017 |{{?}} |64 Gbit |HBM2 |Samsung |20 nm |CMOS |{{?}} |<ref name="Shilov2017"/> |- |{{sort|2018|January 2018}} |K4ZAF325BM |16 Gbit |SGRAM ([[GDDR6]]) |Samsung |[[10 nm process|10 nm]] |[[FinFET]] |225 mm<sup>2</sup> |<ref>{{cite news |title=Samsung Electronics Starts Producing Industry's First 16-Gigabit GDDR6 for Advanced Graphics Systems |url=https://news.samsung.com/global/samsung-electronics-starts-producing-industrys-first-16-gigabit-gddr6-for-advanced-graphics-systems |access-date=15 July 2019 |publisher=[[Samsung]] |date=January 18, 2018}}</ref><ref name='tr_gddr6'>{{cite news|last1=Killian|first1=Zak|title=Samsung fires up its foundries for mass production of GDDR6 memory|url=https://techreport.com/news/33129/samsung-fires-up-its-foundries-for-mass-production-of-gddr6-memory|access-date=18 January 2018|publisher=Tech Report|date=18 January 2018}}</ref><ref>{{cite news |title=Samsung Begins Producing The Fastest GDDR6 Memory In The World |url=https://wccftech.com/samsung-gddr6-16gb-18gbps-mass-production-official/ |access-date=16 July 2019 |work=Wccftech |date=18 January 2018}}</ref> |} <section end="SDRAM timeline"/>
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