Editing MOSFET (section)

===Increased junction leakage===
To make devices smaller, junction design has become more complex, leading to higher [[Doping (semiconductors)|doping]] levels, shallower junctions, "halo" doping and so forth,<ref>{{cite web|url=http://frontiersemi.com/pdf/papers/RsLransist.pdf |title=Frontier Semiconductor Paper |accessdate=2012-06-02 |url-status=dead |archiveurl=https://web.archive.org/web/20120227064415/http://frontiersemi.com/pdf/papers/RsLransist.pdf |archivedate=February 27, 2012 }}</ref><ref name=Chen>{{ cite book | first = Wai-Kai|last=Chen | title = The VLSI Handbook | page = Fig. 2.28, p. 2–22 | year = 2006 | publisher = CRC Press | isbn = 978-0-8493-4199-1 | url = https://books.google.com/books?id=NDdsjtTLTd0C&pg=PT49 | no-pp = true}}</ref> all to decrease drain-induced barrier lowering (see the section on [[#Junction design|junction design]]). To keep these complex junctions in place, the annealing steps formerly used to remove damage and electrically active defects must be curtailed<ref>{{cite journal |doi=10.1557/PROC-765-D7.4 |first1=R. |last1=Lindsay |title=A Comparison of Spike, Flash, SPER and Laser Annealing for 45nm CMOS |journal=MRS Proceedings |volume=765 |year=2011 |last2=Pawlak |last3=Kittl |last4=Henson |last5=Torregiani |last6=Giangrandi |last7=Surdeanu |last8=Vandervorst |last9=Mayur |last10=Ross |last11=McCoy |last12=Gelpey |last13=Elliott |last14=Pages |last15=Satta |last16=Lauwers |last17=Stolk |last18=Maex}}</ref> increasing junction leakage. Heavier doping is also associated with thinner depletion layers and more recombination centers that result in increased leakage current, even without lattice damage.