Editing History of computing hardware (section)

==Semiconductor memory==
{{Main|Semiconductor memory}}

The [[MOSFET]] (metal–oxide–semiconductor field-effect transistor, or MOS transistor) was invented by [[Mohamed M. Atalla]] and [[Dawon Kahng]] at [[Bell Labs]] in 1959.<ref name="computerhistory">{{cite journal|title=1960 - Metal Oxide Semiconductor (MOS) Transistor Demonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |access-date=2019-10-21|journal=The Silicon Engine|publisher=[[Computer History Museum]]|archive-date=2019-10-27|archive-url=https://web.archive.org/web/20191027045554/https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/|url-status=live}}</ref> In addition to data processing, the MOSFET enabled the practical use of MOS transistors as [[memory cell (computing)|memory cell]] storage elements, a function previously served by [[magnetic cores]]. [[Semiconductor memory]], also known as [[MOS memory]], was cheaper and consumed less power than [[magnetic-core memory]].<ref name="computerhistory1970">{{cite web |title=1970: MOS Dynamic RAM Competes with Magnetic Core Memory on Price |url=https://www.computerhistory.org/siliconengine/mos-dynamic-ram-competes-with-magnetic-core-memory-on-price/ |website=[[Computer History Museum]] |access-date=29 July 2019 |archive-date=2021-10-26 |archive-url=https://web.archive.org/web/20211026142915/https://www.computerhistory.org/siliconengine/mos-dynamic-ram-competes-with-magnetic-core-memory-on-price/ |url-status=live }}</ref> MOS [[random-access memory]] (RAM), in the form of [[static RAM]] (SRAM), was developed by John Schmidt at [[Fairchild Semiconductor]] in 1964.<ref name="computerhistory1970"/><ref>{{Cite book |url=https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt|title=Solid State Design - Vol. 6|date=1965|publisher=Horizon House|access-date=2020-10-18 |archive-date=2023-02-02 |archive-url=https://web.archive.org/web/20230202182713/https://books.google.com/books?id=kG4rAQAAIAAJ&q=John+Schmidt|url-status=live}}</ref> In 1966, [[Robert Dennard]] at the [[IBM Thomas J. Watson Research Center]] developed MOS [[dynamic RAM]] (DRAM).<ref name="ibm100">{{cite web |title=DRAM |website=IBM100 |publisher=[[IBM]] |url= https://www.ibm.com/ibm/history/ibm100/us/en/icons/dram/ |access-date=20 September 2019 |date=9 August 2017 |archive-url=https://web.archive.org/web/20190620014432/https://www.ibm.com/ibm/history/ibm100/us/en/icons/dram/ |archive-date=2019-06-20 |url-status=live}}</ref> In 1967, Dawon Kahng and [[Simon Sze]] at Bell Labs developed the [[floating-gate MOSFET]], the basis for MOS [[non-volatile memory]] such as [[EPROM]], [[EEPROM]] and [[flash memory]].<ref name="computerhistory1971">{{cite web |title=1971: Reusable semiconductor ROM introduced |url=https://www.computerhistory.org/storageengine/reusable-semiconductor-rom-introduced/ |website=[[Computer History Museum]] |access-date=19 June 2019 |archive-date=2019-10-03 |archive-url=https://web.archive.org/web/20191003063442/https://www.computerhistory.org/storageengine/reusable-semiconductor-rom-introduced/ |url-status=live }}</ref><ref name="economist">{{cite news |title=Not just a flash in the pan |url=https://www.economist.com/technology-quarterly/2006/03/11/not-just-a-flash-in-the-pan |newspaper=[[The Economist]] |date=11 March 2006 |access-date=10 September 2019 |archive-date=2019-09-25 |archive-url=https://web.archive.org/web/20190925021310/https://www.economist.com/technology-quarterly/2006/03/11/not-just-a-flash-in-the-pan |url-status=live }}</ref>