Editing Transistor (section)

===European Electronic Component Manufacturers Association (EECA)===
The European Electronic Component Manufacturers Association (EECA) uses a numbering scheme that was inherited from [[Pro Electron]] when it merged with EECA in 1983. This scheme begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A three-digit sequence number (or one letter and two digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. C often means high ''h''<sub>FE</sub>, such as in: BC549C<ref>{{cite web |url=http://www.fairchildsemi.com/ds/BC/BC549.pdf |title=Datasheet for BC549, with A, B and C gain groupings |access-date=June 30, 2012 |website=Fairchild Semiconductor |url-status=live |archive-url=https://web.archive.org/web/20120407001013/http://www.fairchildsemi.com/ds/BC/BC549.pdf |archive-date=April 7, 2012 }}</ref>) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A<ref>{{cite web |url=http://www.datasheetcatalog.org/datasheet/philips/BUK854-800A.pdf |title=Datasheet for BUK854-800A (800volt IGBT) |access-date=June 30, 2012 |url-status=live |archive-url=https://web.archive.org/web/20120415132635/http://www.datasheetcatalog.org/datasheet/philips/BUK854-800A.pdf |archive-date=April 15, 2012 }}</ref>). The more common prefixes are:

{|class="wikitable"
|+ EECA transistor prefix table
|-
! Prefix !! Type and usage !! Example !! Equivalent !! Reference
|-
|AC || [[Germanium]], small-signal [[Audio Frequency|AF]] transistor || AC126 || NTE102A || 
|-
|AD || Germanium, [[Audio Frequency|AF]] power transistor || AD133 || NTE179 || 
|-
|AF || Germanium, small-signal [[Radio Frequency|RF]] transistor || AF117 || NTE160 || 
|-
|AL || Germanium, [[Radio Frequency|RF]] power transistor || ALZ10 || NTE100 || 
|-
|AS || Germanium, switching transistor || ASY28 || NTE101 || 
|-
|AU || Germanium, power switching transistor || AU103 || NTE127 || 
|-
|BC || [[Silicon]], small-signal transistor ("general purpose") || BC548 || [[2N3904]] || [https://www.mccsemi.com/pdf/Products/2N3904(TO-92).pdf Datasheet]
|-
|BD || Silicon, power transistor || BD139 || NTE375 || [http://www.fairchildsemi.com/ds/BD/BD135.pdf Datasheet]
|-
|BF || Silicon, [[Radio Frequency|RF]] (high frequency) [[BJT]] or [[FET]] || BF245 || NTE133 || [http://www.onsemi.com/pub_link/Collateral/BF245A-D.PDF Datasheet]
|-
|BS || Silicon, switching transistor (BJT or [[MOSFET]]) || [[BS170]] || [[2N7000]] || [http://www.fairchildsemi.com/ds/BS/BS170.pdf Datasheet]
|-
|BL || Silicon, high frequency, high power (for transmitters) || BLW60 || NTE325 || [http://www.datasheetcatalog.org/datasheet/philips/BLW60.pdf Datasheet]
|-
|BU || Silicon, high voltage (for [[cathode-ray tube|CRT]] horizontal deflection circuits) || BU2520A || NTE2354 || [http://www.datasheetcatalog.org/datasheet/philips/BU2520A.pdf Datasheet]
|-
|CF || [[Gallium arsenide]], small-signal [[microwave]] transistor ([[MESFET]])&nbsp;|| CF739 || — || [https://web.archive.org/web/20150109012745/http://www.kesun.com/pdf/rf%20transistor/CF739.pdf Datasheet]
|-
|CL || Gallium arsenide, [[microwave]] power transistor ([[Field-effect transistor|FET]]) || CLY10 || — || [http://www.datasheetcatalog.org/datasheet/siemens/CLY10.pdf Datasheet]
|}