Editing Transistor (section)

===Joint Electron Device Engineering Council (JEDEC)===
The [[JEDEC]] part numbering scheme evolved in the 1960s in the United States. The JEDEC ''EIA-370'' transistor device numbers usually start with ''2N'', indicating a three-terminal device.<ref>{{Cite web| title = Type Registration, Data Sheets| access-date = March 7, 2025| url = https://www.jedec.org/standards-documents/type-registration-data-sheets |publisher=JEDEC}}</ref> Dual-gate [[field-effect transistor]]s are four-terminal devices, and begin with 3N. The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, [[2N3055]] is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as A, is sometimes used to indicate a newer variant, but rarely gain groupings.

{|class="wikitable"
|+ JEDEC prefix table
|-
! Prefix !! Type and usage
|-
|1N || two-terminal device, such as diodes
|-
|2N || three-terminal device, such as transistors or single-gate [[field-effect transistor]]s
|-
|3N || four-terminal device, such as dual-gate field-effect transistors
|}