Editing Semiconductor device (section)

===Metal-oxide semiconductor===
{{Main|MOSFET}}
{{See also|Semiconductor device fabrication}}

In 1955, [[Carl Frosch]] and Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects.<ref name=":0">{{Cite journal |last1=Huff |first1=Howard |last2=Riordan |first2=Michael |date=2007-09-01 |title=Frosch and Derick: Fifty Years Later (Foreword) |url=https://iopscience.iop.org/article/10.1149/2.F02073IF |journal=The Electrochemical Society Interface |volume=16 |issue=3 |pages=29 |doi=10.1149/2.F02073IF |issn=1064-8208}}</ref><ref>{{Cite patent|number=US2802760A|title=Oxidation of semiconductive surfaces for controlled diffusion|gdate=1957-08-13|invent1=Lincoln|invent2=Frosch|inventor1-first=Derick|inventor2-first=Carl J.|url=https://patents.google.com/patent/US2802760A}}</ref> By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in which drain and source were adjacent at the same surface.<ref name="iopscience.iop.org">{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref> They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer.<ref name=":0" /><ref name="iopscience.iop.org"/> At Bell Labs, the importance of Frosch and Derick technique and transistors was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At [[Shockley Semiconductor Laboratory|Shockley Semiconductor]], Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including [[Jean Hoerni]],<ref name="Moskowitz">{{cite book |last1=Moskowitz |first1=Sanford L. |url=https://books.google.com/books?id=2STRDAAAQBAJ&pg=PA168 |title=Advanced Materials Innovation: Managing Global Technology in the 21st century |date=2016 |publisher=[[John Wiley & Sons]] |isbn=978-0-470-50892-3 |page=168}}</ref><ref>{{cite book |author1=Christophe Lécuyer |url=https://books.google.com/books?id=LaZpUpkG70QC&pg=PA62 |title=Makers of the Microchip: A Documentary History of Fairchild Semiconductor |author2=David C. Brook |author3=Jay Last |date=2010 |publisher=MIT Press |isbn=978-0-262-01424-3 |pages=62–63}}</ref><ref>{{cite book |last1=Claeys |first1=Cor L. |url=https://books.google.com/books?id=bu22JNYbE5MC&pg=PA27 |title=ULSI Process Integration III: Proceedings of the International Symposium |date=2003 |publisher=[[The Electrochemical Society]] |isbn=978-1-56677-376-8 |pages=27–30}}</ref><ref name="Lojek120">{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=[[Springer Science & Business Media]] |isbn=9783540342588 |page=120}}</ref> who would later invent the [[planar process]] in 1959 while at [[Fairchild Semiconductor]].<ref>{{patent|US|3025589|Hoerni, J. A.: "Method of Manufacturing Semiconductor Devices” filed May 1, 1959}}</ref><ref>{{patent|US|3064167|Hoerni, J. A.: "Semiconductor device" filed May 15, 1960}}</ref>
[[File:1957(Figure_9)-Gate_oxide_transistor_by_Frosch_and_Derrick.png|thumb|310x310px|1957, Diagram of one of the SiO2 transistor devices made by Frosch and Derick<ref name="iopscience.iop.org"/>]]
After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/[[Silicon dioxide|SiO<sub>2</sub>]] stack and published their results in 1960.<ref>{{Cite journal |last1=Ligenza |first1=J. R. |last2=Spitzer |first2=W. G. |date=1960-07-01 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |volume=14 |pages=131–136 |doi=10.1016/0022-3697(60)90219-5 |issn=0022-3697}}</ref><ref name="Deal">{{cite book |last1=Deal |first1=Bruce E. |title=Silicon materials science and technology |date=1998 |publisher=[[The Electrochemical Society]] |isbn=978-1566771931 |page=183 |chapter=Highlights Of Silicon Thermal Oxidation Technology |chapter-url=https://books.google.com/books?id=cr8FPGkiRS0C&pg=PA183}}</ref><ref>{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer Science & Business Media |isbn=978-3540342588 |page=322}}</ref> Following this research, [[Mohamed Atalla]] and [[Dawon Kahng]] proposed a silicon MOS transistor in 1959<ref name="Bassett22">{{cite book |last1=Bassett |first1=Ross Knox |url=https://books.google.com/books?id=UUbB3d2UnaAC&pg=PA22 |title=To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology |date=2007 |publisher=[[Johns Hopkins University Press]] |isbn=978-0-8018-8639-3 |pages=22–23}}</ref> and successfully demonstrated a working MOS device with their Bell Labs team in 1960.<ref>{{cite journal |last1=Atalla |first1=M. |author1-link=Mohamed Atalla |last2=Kahng |first2=D. |author2-link=Dawon Kahng |date=1960 |title=Silicon-silicon dioxide field induced surface devices |journal=IRE-AIEE Solid State Device Research Conference}}</ref><ref>{{cite journal |title=1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated |url=https://www.computerhistory.org/siliconengine/metal-oxide-semiconductor-mos-transistor-demonstrated/ |journal=The Silicon Engine |publisher=[[Computer History Museum]] |access-date=2023-01-16}}</ref> Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device.<ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories |pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5}}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |location=Berlin, Heidelberg |page=321}}</ref>

With its [[MOSFET scaling|scalability]],<ref>{{cite journal |last1=Motoyoshi |first1=M. |title=Through-Silicon Via (TSV) |journal=Proceedings of the IEEE |date=2009 |volume=97 |issue=1 |pages=43–48 |doi=10.1109/JPROC.2008.2007462 |s2cid=29105721 |url=https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |archive-url=https://web.archive.org/web/20190719120523/https://pdfs.semanticscholar.org/8a44/93b535463daa7d7317b08d8900a33b8cbaf4.pdf |url-status=dead |archive-date=2019-07-19 |issn=0018-9219}}</ref> and much lower power consumption and higher density than [[bipolar junction transistor]]s,<ref>{{cite news |title=Transistors Keep Moore's Law Alive |url=https://www.eetimes.com/author.asp?section_id=36&doc_id=1334068 |access-date=18 July 2019 |work=[[EETimes]] |date=12 December 2018}}</ref> the MOSFET became the most common type of transistor in computers, electronics,<ref name="Khang">{{cite web |title=Dawon Kahng |url=https://www.invent.org/inductees/dawon-kahng |access-date=27 June 2019 |website=[[National Inventors Hall of Fame]]}}</ref> and [[communications technology]] such as [[smartphone]]s.<ref name="uspto">{{cite web |title=Remarks by Director Iancu at the 2019 International Intellectual Property Conference |url=https://www.uspto.gov/about-us/news-updates/remarks-director-iancu-2019-international-intellectual-property-conference |website=[[United States Patent and Trademark Office]] |date=June 10, 2019 |access-date=20 July 2019}}</ref> The [[US Patent and Trademark Office]] calls the MOSFET a "groundbreaking invention that transformed life and culture around the world".<ref name="uspto" />

Bardeen's 1948 inversion layer concept, forms the basis of CMOS technology today.<ref>{{cite book |author=Howard R. Duff |title=AIP Conference Proceedings |date=2001 |volume=550 |pages=3–32 |chapter=John Bardeen and transistor physics |doi=10.1063/1.1354371 |doi-access=free}}</ref> [[CMOS]] (complementary [[MOSFET|MOS]]) was invented by [[Chih-Tang Sah]] and [[Frank Wanlass]] at [[Fairchild Semiconductor]] in 1963.<ref name="computerhistory1963">{{cite web |title=1963: Complementary MOS Circuit Configuration is Invented |url=https://www.computerhistory.org/siliconengine/complementary-mos-circuit-configuration-is-invented/ |website=[[Computer History Museum]] |access-date=6 July 2019}}</ref> The first report of a [[floating-gate MOSFET]] was made by Dawon Kahng and [[Simon Sze]] in 1967.<ref>D. Kahng and S. M. Sze, "A floating gate and its application to memory devices", ''The Bell System Technical Journal'', vol. 46, no. 4, 1967, pp. 1288–1295</ref> [[FinFET]] (fin field-effect transistor), a type of 3D [[multigate device|multi-gate]] MOSFET, was proposed by H. R. Farrah ([[Bendix Corporation]]) and R. F. Steinberg in 1967<ref name="FarrahSteinberg">{{cite journal |last1=Farrah |first1=H. R. |last2=Steinberg |first2=R. F. |date=February 1967 |title=Analysis of double-gate thin-film transistor |journal=IEEE Transactions on Electron Devices |volume=14 |issue=2 |pages=69–74 |bibcode=1967ITED...14...69F |doi=10.1109/T-ED.1967.15901}}</ref> and first built by Digh Hisamoto and his team of researchers at [[Hitachi|Hitachi Central Research Laboratory]] in 1989.<ref>{{cite web |title=IEEE Andrew S. Grove Award Recipients |url=https://www.ieee.org/about/awards/bios/grove-recipients.html |archive-url=https://web.archive.org/web/20180909112404/https://www.ieee.org/about/awards/bios/grove-recipients.html |url-status=dead |archive-date=September 9, 2018 |website=[[IEEE Andrew S. Grove Award]] |publisher=[[Institute of Electrical and Electronics Engineers]] |access-date=4 July 2019}}</ref><ref>{{cite web |title=The Breakthrough Advantage for FPGAs with Tri-Gate Technology |url=https://www.intel.com/content/dam/www/programmable/us/en/pdfs/literature/wp/wp-01201-fpga-tri-gate-technology.pdf |archive-url=https://ghostarchive.org/archive/20221009/https://www.intel.com/content/dam/www/programmable/us/en/pdfs/literature/wp/wp-01201-fpga-tri-gate-technology.pdf |archive-date=2022-10-09 |url-status=live |publisher=[[Intel]] |year=2014 |access-date=4 July 2019}}</ref>