Editing Static random-access memory (section)

==Characteristics==
Though it can be characterized as [[volatile memory]], SRAM exhibits [[data remanence]].<ref name="skorobogatov">{{cite journal|title=Low temperature data remanence in static RAM|author=Sergei Skorobogatov|website =University of Cambridge, Computer Laboratory|date=June 2002|doi=10.48456/tr-536 |url=http://www.cl.cam.ac.uk/techreports/UCAM-CL-TR-536.html|access-date=2008-02-27}}</ref>

SRAM offers a simple data access model and does not require a refresh circuit. Performance and reliability are good and power consumption is low when idle. Since SRAM requires more transistors per bit to implement, it is less dense and more expensive than DRAM and also has a higher [[power consumption]] during read or write access. The power consumption of SRAM varies widely depending on how frequently it is accessed.<ref name="Null">{{cite book |last1=Null |first1=Linda |last2=Lobur |first2=Julia |url=https://books.google.com/books?id=QGPHAl9GE-IC |title=The Essentials of Computer Organization and Architecture |publisher=Jones and Bartlett Publishers |year=2006 |page=282 |isbn=978-0763737696 |accessdate=2021-09-14 }}</ref>