Editing Insulated-gate bipolar transistor (section)

==Difference between thyristor and IGBT==

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|+ Difference between thyristor and IGBT<ref>[https://www.nevsemi.com/blog/igbt-vs-thyristor Difference Between IGBT and Thyristor].</ref> 
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! Aspect !! Thyristor !! IGBT
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| Definition || A four-layer semiconductor device with a P-N-P-N structure || An insulated-gate bipolar transistor combining features from bipolar transistors and MOSFETs
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| Terminals || Anode, cathode, gate || Emitter, collector, gate
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| Layers || Four layers || Three layers
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| Junction || PNPN structure || NPN(P) structure
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| Modes of operation || Reverse blocking, forward blocking, forward conducting || On-state, off-state
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| Design structure || Coupled transistors (PNP and NPN) || Combined bipolar and MOSFET features
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| Carrier source || Two sources of carriers || One source of carriers
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| Turn-on voltage || N/A || Low gate voltage required
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| Turn off loss || Higher || Lower
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| Plasma density || Higher || Lower
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| Operating frequency range || Suitable for line frequency, typically lower || Suitable for high frequencies, typically higher
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| Die size and paralleling requirements || Larger die size, can be manufactured as monolithic devices up to 6" (15&nbsp;cm) in diameter || Smaller die size, often paralleled in a package
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| Power range || Suitable for high-power applications || Suitable for medium-power applications
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| Control requirements || Requires gate current || Requires continuous gate voltage
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| Value for money || Cost-effective || Relatively higher cost
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| Control method || Pulse triggering || Gate voltage control
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| Switching speed || Slower || Faster
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| Current switching capability || High || Moderate
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| Control current || High current drive || Low current drive
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| Voltage capability || High voltage handling || Lower voltage handling
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| Power loss || Higher power dissipation || Lower power dissipation
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| Application || High voltage, robustness || High-speed switching, efficiency
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