Editing EPROM (section)

==Details==
[[File:Dr. Neuhaus, Smarty 28.8 TI - Atmel AT27C010-9401.jpg|thumb|upright|[[Atmel]] AT27C010 - an OTP EPROM]]
As the quartz window is expensive to make, OTP (one-time programmable) chips were introduced; here, the die is mounted in an opaque package so it cannot be erased after programming – this also eliminates the need to test the erase function, further reducing cost. OTP versions of both EPROMs and EPROM-based microcontrollers are manufactured. However, OTP EPROM (whether separate or part of a larger chip) is being increasingly replaced by [[EEPROM]] for small sizes, where the cell cost isn't too important, and [[flash memory|flash]] for larger sizes.

A programmed EPROM retains its data for a minimum of ten to twenty years,<ref>{{Citation | first1 = Paul | last1 = Horowitz | author1-link = Paul Horowitz | first2 = Winfield | last2 = Hill | title = The Art of Electronics | edition = 2nd | publisher = Cambridge University Press | place = Cambridge | year = 1989 | isbn = 0-521-37095-7 | page = [https://archive.org/details/artofelectronics00horo/page/817 817] | url = https://archive.org/details/artofelectronics00horo/page/817 }}.</ref> with many still retaining data after 35 or more years, and can be read an unlimited number of times without affecting the lifetime.  The erasing window must be kept covered with an opaque label to prevent accidental erasure by the UV found in sunlight or camera flashes. Old PC [[BIOS]] chips were often EPROMs, and the erasing window was often covered with an adhesive label containing the BIOS publisher's name, the [[BIOS]] revision, and a copyright notice.  Often this label was foil-backed to ensure its opacity to UV.

Erasure of the EPROM begins to occur with wavelengths shorter than 400 [[Nanometre|nm]]. Exposure time for sunlight of one week or three years for room fluorescent lighting may cause erasure. The recommended erasure procedure is exposure to UV light at 253.7&nbsp;nm of at least 15 Ws/cm<sup>2</sup>, usually achieved in 20 to 30 minutes with the lamp at a distance of about 2.5&nbsp;cm.<ref>{{cite web|title=M27C512 Datasheet|url=http://media.digikey.com/PDF/Data%20Sheets/ST%20Microelectronics%20PDFS/M27C512.pdf|archive-url=https://web.archive.org/web/20180906052602/http://media.digikey.com/PDF/Data%20Sheets/ST%20Microelectronics%20PDFS/M27C512.pdf|archive-date=2018-09-06|access-date=2018-10-07|url-status=live}}</ref>

Erasure can also be accomplished with [[X-ray]]s:
{{Quote | Erasure, however, has to be accomplished by non-electrical methods, since the gate electrode is not accessible electrically. Shining ultraviolet light on any part of an unpackaged device causes a photocurrent to flow from the floating gate back to the silicon substrate, thereby discharging the gate to its initial, uncharged condition ([[photoelectric effect]]). This method of erasure allows complete testing and correction of a complex memory array before the package is finally sealed. Once the package is sealed, information can still be erased by exposing it to X radiation in excess of 5*10<sup>4</sup> [[Rad (unit)|rads]],{{Efn | 500 [[Joule|J]]/kg}} a dose which is easily attained with commercial X-ray generators.<ref>{{Citation | date = May 10, 1971 | title = Electronics Magazine | type = article | first = Dov | last = Frohman| title-link = Electronics (magazine) }}.</ref>}}

{{Quote | In other words, to erase your EPROM, you would first have to X-ray it and then put it in an oven at about 600 degrees Celsius (to anneal semiconductor alterations caused by the X-rays). The effects of this process on the reliability of the part would have required extensive testing so they decided on the window instead.<ref name = "jmargolin_com-eprom">{{cite web|title= EPROM |url=http://www.jmargolin.com/patents/eprom.htm | date = May 8, 2009 | first = J | last = Margolin}}.</ref>}}

EPROMs have a limited but large number of erase cycles; the silicon dioxide around the gates accumulates damage from each cycle, making the chip unreliable after several thousand cycles. EPROM programming is slow compared to other forms of memory. Because higher-density parts have little exposed oxide between the layers of interconnects and gate, ultraviolet erasing becomes less practical for very large memories.  Even dust inside the package can prevent some cells from being erased.{{Sfn | Sah | 1991 | p = 640}}