Editing Digital image processing (section)

===Image sensors===
{{Main|Image sensor}}

The basis for modern [[image sensors]] is [[metal–oxide–semiconductor]] (MOS) technology,<ref name="Williams">{{cite book |last1=Williams |first1=J. B. |title=The Electronics Revolution: Inventing the Future |date=2017 |publisher=Springer |isbn=978-3-319-49088-5 |pages=245–8 |url=https://books.google.com/books?id=v4QlDwAAQBAJ&pg=PA245}}</ref> invented at Bell Labs between 1955 and 1960,<ref>{{Cite patent|number=US2802760A|title=Oxidation of semiconductive surfaces for controlled diffusion|gdate=1957-08-13|invent1=Lincoln|invent2=Frosch|inventor1-first=Derick|inventor2-first=Carl J.|url=https://patents.google.com/patent/US2802760A}}</ref><ref>{{Cite journal |last1=Frosch |first1=C. J. |last2=Derick |first2=L |date=1957 |title=Surface Protection and Selective Masking during Diffusion in Silicon |url=https://iopscience.iop.org/article/10.1149/1.2428650 |journal=Journal of the Electrochemical Society |language=en |volume=104 |issue=9 |pages=547 |doi=10.1149/1.2428650}}</ref><ref>{{Cite journal |last=KAHNG |first=D. |date=1961 |title=Silicon-Silicon Dioxide Surface Device |url=https://doi.org/10.1142/9789814503464_0076 |journal=Technical Memorandum of Bell Laboratories |pages=583–596 |doi=10.1142/9789814503464_0076 |isbn=978-981-02-0209-5}}</ref><ref>{{Cite book |last=Lojek |first=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=Springer-Verlag Berlin Heidelberg |isbn=978-3-540-34258-8 |location=Berlin, Heidelberg |page=321}}</ref><ref>{{Cite journal |last1=Ligenza |first1=J.R. |last2=Spitzer |first2=W.G. |date=1960 |title=The mechanisms for silicon oxidation in steam and oxygen |url=https://linkinghub.elsevier.com/retrieve/pii/0022369760902195 |journal=Journal of Physics and Chemistry of Solids |language=en |volume=14 |pages=131–136 |bibcode=1960JPCS...14..131L |doi=10.1016/0022-3697(60)90219-5}}</ref><ref name="Lojek1202">{{cite book |last1=Lojek |first1=Bo |title=History of Semiconductor Engineering |date=2007 |publisher=[[Springer Science & Business Media]] |isbn=9783540342588 |page=120}}</ref> This led to the development of digital [[semiconductor]] image sensors, including the [[charge-coupled device]] (CCD) and later the [[CMOS sensor]].<ref name="Williams"/>

The charge-coupled device was invented by [[Willard S. Boyle]] and [[George E. Smith]] at Bell Labs in 1969.<ref>{{Cite book | title = Scientific charge-coupled devices | author = James R. Janesick | publisher = SPIE Press | year = 2001 | isbn = 978-0-8194-3698-6 | pages = 3–4 | url = https://books.google.com/books?id=3GyE4SWytn4C&pg=PA3 }}</ref> While researching MOS technology, they realized that an electric charge was the analogy of the magnetic bubble and that it could be stored on a tiny [[MOS capacitor]]. As it was fairly straightforward to [[semiconductor device fabrication|fabricate]] a series of MOS capacitors in a row, they connected a suitable voltage to them so that the charge could be stepped along from one to the next.<ref name="Williams"/> The CCD is a semiconductor circuit that was later used in the first [[digital video camera]]s for [[television broadcasting]].<ref>{{cite journal|last1=Boyle|first1=William S|last2=Smith|first2=George E.|date=1970|title=Charge Coupled Semiconductor Devices|journal=Bell Syst. Tech. J.|volume=49|issue=4|pages=587–593|doi=10.1002/j.1538-7305.1970.tb01790.x|bibcode=1970BSTJ...49..587B }}</ref>

The [[NMOS logic|NMOS]] [[active-pixel sensor]] (APS) was invented by [[Olympus Corporation|Olympus]] in Japan during the mid-1980s. This was enabled by advances in MOS [[semiconductor device fabrication]], with [[MOSFET scaling]] reaching smaller [[List of semiconductor scale examples|micron and then sub-micron]] levels.<ref name=fossum93>{{cite book |last1=Fossum |first1=Eric R. |author1-link=Eric Fossum |title= Charge-Coupled Devices and Solid State Optical Sensors III |series=Proceedings of the SPIE |volume=1900 |date=12 July 1993 |doi=10.1117/12.148585 |pages=2–14 |editor1-last=Blouke |editor1-first=Morley M.|citeseerx=10.1.1.408.6558 |bibcode=1993SPIE.1900....2F |chapter=Active pixel sensors: Are CCDS dinosaurs? |s2cid=10556755 }}</ref><ref>{{cite web |last1=Fossum |first1=Eric R. |s2cid=18831792 |author1-link=Eric Fossum |title=Active Pixel Sensors |website=Eric Fossum |year=2007 |url=http://ericfossum.com/Publications/Papers/Active%20Pixel%20Sensors%20LASER%20FOCUS.pdf |archive-url=https://web.archive.org/web/20190829162855/http://ericfossum.com/Publications/Papers/Active%20Pixel%20Sensors%20LASER%20FOCUS.pdf |archive-date=2019-08-29 |url-status=live}}</ref> The NMOS APS was fabricated by Tsutomu Nakamura's team at Olympus in 1985.<ref>{{cite journal |last1=Matsumoto |first1=Kazuya |last2=Nakamura |first2=Tsutomu |last3=Yusa |first3=Atsushi |last4=Nagai |first4=Shohei |display-authors=1|date=1985 |title=A new MOS phototransistor operating in a non-destructive readout mode |journal=Japanese Journal of Applied Physics |volume=24 |issue=5A |page=L323|doi=10.1143/JJAP.24.L323 |bibcode=1985JaJAP..24L.323M |s2cid=108450116 }}</ref> The [[CMOS]] active-pixel sensor (CMOS sensor) was later developed by [[Eric Fossum]]'s team at the [[NASA]] [[Jet Propulsion Laboratory]] in 1993.<ref name="Fossum2014">{{cite journal |last1=Fossum |first1=Eric R. |author1-link=Eric Fossum |last2=Hondongwa |first2=D. B. |title=A Review of the Pinned Photodiode for CCD and CMOS Image Sensors |journal=IEEE Journal of the Electron Devices Society |date=2014 |volume=2 |issue=3 |pages=33–43 |doi=10.1109/JEDS.2014.2306412 |doi-access=free }}</ref> By 2007, sales of CMOS sensors had surpassed CCD sensors.<ref>{{cite news |title=CMOS Image Sensor Sales Stay on Record-Breaking Pace |url=http://www.icinsights.com/news/bulletins/CMOS-Image-Sensor-Sales-Stay-On-RecordBreaking-Pace/ |access-date=6 October 2019 |work=IC Insights |date=8 May 2018 |archive-url=https://web.archive.org/web/20190621180401/http://www.icinsights.com/news/bulletins/CMOS-Image-Sensor-Sales-Stay-On-RecordBreaking-Pace/ |archive-date=21 June 2019 |url-status=live }}</ref>

MOS image sensors are widely used in [[optical mouse]] technology. The first optical mouse, invented by [[Richard F. Lyon]] at [[Xerox]] in 1980, used a [[6 μm process|5{{nbsp}}μm]] [[NMOS logic|NMOS]] [[integrated circuit]] sensor chip.<ref>{{cite book |last1=Lyon |first1=Richard F. |title=Advances in Embedded Computer Vision |date=2014 |publisher=Springer |isbn=9783319093871 |pages=3–22 (3) |chapter=The Optical Mouse: Early Biomimetic Embedded Vision |author1-link=Richard F. Lyon |chapter-url=https://books.google.com/books?id=p_GbBQAAQBAJ&pg=PA3}}</ref><ref>{{cite book |last1=Lyon |first1=Richard F. |title=VLSI Systems and Computations |date=August 1981 |publisher=Computer Science Press |isbn=978-3-642-68404-3 |editor1=H. T. Kung |pages=1–19 |chapter=The Optical Mouse, and an Architectural Methodology for Smart Digital Sensors |doi=10.1007/978-3-642-68402-9_1 |author1-link=Richard F. Lyon |editor2=Robert F. Sproull |editor3=Guy L. Steele |chapter-url=http://bitsavers.trailing-edge.com/pdf/xerox/parc/techReports/VLSI-81-1_The_Optical_Mouse.pdf |archive-url=https://web.archive.org/web/20140226021235/http://bitsavers.trailing-edge.com/pdf/xerox/parc/techReports/VLSI-81-1_The_Optical_Mouse.pdf |archive-date=2014-02-26 |url-status=live |s2cid=60722329}}</ref> Since the first commercial optical mouse, the [[IntelliMouse]] introduced in 1999, most optical mouse devices use CMOS sensors.<ref>{{cite web |last1=Brain |first1=Marshall |last2=Carmack |first2=Carmen |date=24 April 2000 |title=How Computer Mice Work |url=https://computer.howstuffworks.com/mouse4.htm |access-date=9 October 2019 |website=[[HowStuffWorks]] |language=en}}</ref><ref name="hackaday">{{cite web |last1=Benchoff |first1=Brian |date=17 April 2016 |title=Building the First Digital Camera |url=http://hackaday.com/2016/04/17/building-the-first-digital-camera/ |access-date=30 April 2016 |website=[[Hackaday]] |quote=the Cyclops was the first digital camera}}</ref>