Editing Crystallographic defect (section)

==Line defects==
Line defects can be described by gauge theories.

[[Dislocation]]s are linear defects, around which the atoms of the crystal lattice are misaligned.<ref name="Hirth-Lothe">{{cite book|author1=Hirth, J. P.  |author2=Lothe, J. |title=Theory of dislocations|publisher=Krieger Pub Co|edition=2|year=1992|isbn=978-0-89464-617-1}}</ref>
There are two basic types of dislocations, the ''edge'' dislocation and the ''screw'' dislocation. "Mixed" dislocations, combining aspects of both types, are also common. 

[[Image:Dislocation edge d2.svg|thumb|An ''edge dislocation'' is shown. The dislocation line is presented in blue, the Burgers vector b in black.]]

Edge dislocations are caused by the termination of a plane of atoms in the middle of a crystal. In such a case, the adjacent planes are not straight, but instead bend around the edge of the terminating plane so that the crystal structure is perfectly ordered on either side. The analogy with a stack of paper is apt: if a half a piece of paper is inserted in a stack of paper, the defect in the stack is only noticeable at the edge of the half sheet.

The screw dislocation is more difficult to visualise, but basically comprises a structure in which a helical path is traced around the linear defect (dislocation line) by the atomic planes of atoms in the crystal lattice.

The presence of dislocation results in lattice strain (distortion). The direction and magnitude of such distortion is expressed in terms of a [[Burgers vector]] (b). For an edge type, b is perpendicular to the dislocation line, whereas in the cases of the screw type it is parallel. In metallic materials, b is aligned with close-packed crystallographic directions and its magnitude is equivalent to one interatomic spacing.

Dislocations can move if the atoms from one of the surrounding planes break their bonds and rebond with the atoms at the terminating edge.

It is the presence of dislocations and their ability to readily move (and interact) under the influence of stresses induced by external loads that leads to the characteristic [[malleability]] of metallic materials.

Dislocations can be observed using [[transmission electron microscopy]], [[field ion microscopy]] and [[atom probe]] techniques.
[[Deep-level transient spectroscopy]] has been used for studying the electrical activity of dislocations in semiconductors, mainly [[silicon]].

[[Disclination]]s are line defects corresponding to "adding" or "subtracting" an angle around a line. Basically, this means that if you track the crystal orientation around the line defect, you get a rotation. Usually, they were thought to play a role only in liquid crystals, but recent developments suggest that they might have a role also in solid materials, e.g. leading to the self-healing of [[Fracture|cracks]].<ref>{{cite web| url = https://www.mit.edu/newsoffice/2013/tension-can-fuse-metal-1009.html| title = Chandler, David L., ''Cracked metal, heal thyself,'' MIT news, October 9, 2013| date = 9 October 2013}}</ref>