Editing Tellurium (section)

===Organotellurium compounds===
{{main|Organotellurium chemistry}}
Organotellurium compounds are mainly of interest in the research context. Several have been examined such as precursors for [[metalorganic vapor phase epitaxy]] growth of II-VI [[compound semiconductor]]s. These precursor compounds include [[dimethyl telluride]], diethyl telluride, diisopropyl telluride, diallyl telluride, and methyl allyl telluride.<ref>{{Cite book|isbn = 978-0-7923-7206-6|chapter-url = https://books.google.com/books?id=HtgEcjQcgkkC&pg=PA265|chapter = Metalorganic vapour phase epitaxy|pages =265–267|editor=Capper, Peter|editor2=Elliott, C. T.|date = 2001|publisher = Kluwer Academic|location = Boston, Mass.|title = Infrared detectors and emitters : materials and devices}}</ref> Diisopropyl telluride (DIPTe) is the preferred precursor for low-temperature growth of CdHgTe by [[MOVPE]].<ref>{{Cite journal|title = Ultra-pure organotellurium precursors for the low-temperature MOVPE growth of II/VI compound semiconductors|doi = 10.1016/0022-0248(88)90613-6|journal = Journal of Crystal Growth|volume = 93|date = 1988|pages = 744–749|last1 = Shenai-Khatkhate|first1 = Deodatta V.|issue =1–4|bibcode = 1988JCrGr..93..744S|last2 = Webb|first2 = Paul|last3 = Cole-Hamilton|first3 = David J.|last4 = Blackmore|first4 = Graham W.|last5 = Brian Mullin|first5 = J. }}</ref> The greatest purity [[metalorganics]] of both [[selenium]] and tellurium are used in these processes. The compounds for semiconductor industry and are prepared by [[adduct purification]].<ref>{{Cite journal|title = Organometallic Molecules for Semiconductor Fabrication [and Discussion]|first6 = P.|last6 = Day|first5 = D. J.|last5 = Cole-Hamilton|first4 = J. B.|last4 = Mullin|first3 = A. E. D.|last3 = McQueen|doi = 10.1098/rsta.1990.0011|first2 = M. B.|journal = Phil. Trans. R. Soc. Lond. A|volume = 330|last2 = Parker|date = 1990|pages = 173–182|last1 = Shenai-Khatkhate|first1 = Deodatta V.|issue =1610|bibcode = 1990RSPTA.330..173S |s2cid = 100757359}}</ref><ref>Mullin, J.B.; Cole-Hamilton, D.J.; Shenai-Khatkhate, D.V.; Webb P. (May 26, 1992) {{US patent|5117021}} "Method for purification of tellurium and selenium alkyls"</ref>

[[Tellurium suboxide]] is used in the media layer of rewritable [[optical disc]]s, including [[CD-RW|ReWritable Compact Discs]] ([[CD-RW]]), ReWritable Digital Video Discs ([[DVD-RW]]), and ReWritable [[Blu-ray Disc]]s.<ref>{{Cite web|url = https://www.engadget.com/2006/10/19/panasonic-says-that-its-100gb-blu-ray-discs-will-last-a-century/|title = Panasonic says that its 100GB Blu-ray discs will last a century|access-date = 2008-11-13|first = Cyrus|last = Farivar|date =2006-10-19}}</ref><ref>{{Cite journal|journal = Japanese Journal of Applied Physics|volume = 37|issue = 4B|date = 1998|pages = 2163–2167|title = Dual-Layer Optical Disk with Te–O–Pd Phase-Change Film|author = Nishiuchi, Kenichi|author2 = Kitaura, Hideki|author3 = Yamada, Noboru|author4 = Akahira, Nobuo|doi = 10.1143/JJAP.37.2163|bibcode = 1998JaJAP..37.2163N| s2cid=119849468 }}</ref>

Tellurium is used in the [[phase change memory]] chips<ref>{{Cite journal|title = Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology|first =S.|last = Hudgens|author2=Johnson, B. | volume = 29|issue = 11|pages = 829–832|date = 2004|journal = MRS Bulletin|doi = 10.1557/mrs2004.236|s2cid =137902404}}
</ref> developed by [[Intel]].<ref>{{Cite journal| journal = IEEE Spectrum|volume =40|issue = 3|date = 2003|pages = 48–54|doi = 10.1109/MSPEC.2003.1184436|title = The New Indelible Memories|first = Linda|last = Geppert}}</ref> [[Bismuth telluride]] (Bi<sub>2</sub>Te<sub>3</sub>) and [[lead telluride]] are working elements of [[thermoelectric]] devices. [[Lead telluride]] exhibits promise in far-[[infrared]] detectors.<ref name=usgs2/>