Editing Ion implantation (section)

== Safety ==

=== Hazardous materials ===
In fabricating [[Wafer (electronics)|wafers]], [[toxic]] materials such as [[arsine]] and [[phosphine]] are often used in the ion implanter process. Other common [[carcinogen]]ic, [[Corrosion|corrosive]], [[flammable]], or toxic elements include [[antimony]], [[arsenic]], [[phosphorus]], and [[boron]]. [[Semiconductor fabrication]] facilities are highly automated, but residue of hazardous elements in machines can be encountered during servicing and in [[vacuum pump]] hardware.

=== High voltages and particle accelerators ===
High voltage power supplies used in ion accelerators necessary for ion implantation can pose a risk of [[electrical injury]].  In addition, high-energy atomic collisions can generate [[X-ray]]s and, in some cases, other ionizing radiation and [[radionuclide]]s. In addition to high voltage, [[particle accelerator]]s such as radio frequency [[linear particle accelerator]]s and laser [[Plasma acceleration|wakefield plasma accelerator]]s present other hazards.