Editing CMOS (section)

== Single-electron MOS transistors ==
Ultra small (L = 20&nbsp;nm, W = 20&nbsp;nm) MOSFETs achieve the single-electron limit when operated at cryogenic temperature over a range of −269&nbsp;°C (4&nbsp;[[kelvin|K]]) to about −258&nbsp;°C (15&nbsp;[[kelvin|K]]). The transistor displays [[Coulomb blockade]] due to progressive charging of electrons one by one. The number of electrons confined in the channel is driven by the gate voltage, starting from an occupation of zero electrons, and it can be set to one or many.<ref>{{Cite journal |last1=Prati |first1=E. |last2=De Michielis |first2=M. |last3=Belli |first3=M. |last4=Cocco |first4=S. |last5=Fanciulli |first5=M. |last6=Kotekar-Patil |first6=D. |last7=Ruoff |first7=M. |last8=Kern |first8=D. P. |last9=Wharam |first9=D. A. |last10=Verduijn |doi=10.1088/0957-4484/23/21/215204 |first10=J. |last11=Tettamanzi |first11=G. C. |last12=Rogge |first12=S. |last13=Roche |first13=B. |last14=Wacquez |first14=R. |last15=Jehl |first15=X. |last16=Vinet |first16=M. |last17=Sanquer |first17=M. |title=Few electron limit of n-type metal oxide semiconductor single electron transistors |journal=Nanotechnology |volume=23 |issue=21 |pages=215204 |year=2012 |pmid=22552118 |arxiv=1203.4811 |bibcode=2012Nanot..23u5204P |s2cid=206063658 }}</ref>