Editing CMOS (section)

== Temperature range ==
Conventional CMOS devices work over a range of −55&nbsp;°C to +125&nbsp;°C.

There were theoretical indications as early as August 2008 that silicon CMOS will work down to −233&nbsp;°C (40&nbsp;[[kelvin|K]]).<ref>Edwards C., "Temperature control", ''[[Engineering & Technology]]'' 26 July{{snd}} 8 August 2008, [[Institution of Engineering and Technology|IET]].</ref> Functioning temperatures near 40&nbsp;K have since been achieved using overclocked AMD [[Phenom II]] processors with a combination of [[liquid nitrogen]] and [[liquid helium]] cooling.<ref>{{cite web |url=http://blogs.amd.com/home/2009/01/15/breaking-records-with-dragons-and-helium-in-the-las-vegas-desert/ |title=Breaking Records with Dragons and Helium in the Las Vegas Desert |first=Patrick |last=Moorhead |publisher=blogs.amd.com/patmoorhead |date=January 15, 2009 |access-date=2009-09-18 |url-status=dead |archive-url=https://web.archive.org/web/20100915140806/http://blogs.amd.com/home/2009/01/15/breaking-records-with-dragons-and-helium-in-the-las-vegas-desert/ |archive-date=September 15, 2010 }}</ref>

[[Silicon carbide]] CMOS devices have been tested for a year at 500&nbsp;°C.<ref>{{cite journal |last1=Clark |first1=D.T. |last2=Ramsay |first2=E.P. |last3=Murphy |first3=A.E. |last4=Smith |first4=D.A. |last5=Thompson |first5=Robin.F. |last6=Young |first6=R.A.R. |last7=Cormack |first7=J.D. |last8=Zhu |first8=C. |last9=Finney |first9=S. |last10=Fletcher |first10=J. |title=High Temperature Silicon Carbide CMOS Integrated Circuits |journal=Materials Science Forum |volume=679–680 |pages=726–729 |year=2011 |doi=10.4028/www.scientific.net/msf.679-680.726 |s2cid=110071501 }}</ref><ref>{{cite web |first1=Alan |last1=Mantooth |first2=Carl-Mikael |last2=Zetterling |first3=Ana |last3=Rusu  |title=The Radio We Could Send to Hell: Silicon carbide radio circuits can take the volcanic heat of Venus |date=28 April 2021 |work=IEEE Spectrum |publisher= |url=https://spectrum.ieee.org/the-radio-we-could-send-to-hell}}</ref>