Editing Semiconductor (section)

==== Carrier generation and recombination ====
{{Main article|Carrier generation and recombination}}

When [[ionizing radiation]] strikes a semiconductor, it may excite an electron out of its energy level and consequently leave a hole. This process is known as [[carrier generation and recombination|''electron-hole pair generation'']]. Electron-hole pairs are constantly generated from [[thermal energy]] as well, in the absence of any external energy source.

Electron-hole pairs are also apt to recombine. [[Conservation of energy]] demands that these recombination events, in which an electron loses an amount of [[energy]] larger than the [[band gap]], be accompanied by the emission of thermal energy (in the form of [[phonon]]s) or radiation (in the form of [[photon]]s).

In some states, the generation and recombination of electron–hole pairs are in equipoise. The number of electron-hole pairs in the [[steady state]] at a given temperature is determined by [[quantum statistical mechanics]]. The precise [[quantum mechanics|quantum mechanical]] mechanisms of generation and recombination are governed by the [[conservation of energy]] and [[conservation of momentum]].

As the probability that electrons and holes meet together is proportional to the product of their numbers, the product is in the steady-state nearly constant at a given temperature, providing that there is no significant electric field (which might "flush" carriers of both types, or move them from neighbor regions containing more of them to meet together) or externally driven pair generation. The product is a function of the temperature, as the probability of getting enough thermal energy to produce a pair increases with temperature, being approximately {{nowrap|exp(−''E''<sub>G</sub>/''kT'')}}, where ''k'' is the [[Boltzmann constant]], ''T'' is the absolute temperature and ''E''<sub>G</sub> is bandgap.

The probability of meeting is increased by carrier traps&nbsp;– impurities or dislocations which can trap an electron or hole and hold it until a pair is completed. Such carrier traps are sometimes purposely added to reduce the time needed to reach the steady-state.<ref>{{cite book |last1=Louis Nashelsky |first1=Robert L.Boylestad |title=Electronic Devices and Circuit Theory |year=2006 |publisher=Prentice-Hall of India Private Limited |location=India |isbn=978-81-203-2967-6 |pages=7–10 |edition=9th}}</ref>