Editing Ruthenium (section)

=== Electronics ===
{{Further|Chemical vapor deposition of ruthenium}}
Electronics is the largest use of ruthenium.<ref name="usgs"/> Ru metal is particularly nonvolatile, which is advantageous in [[microelectronic]] devices.  Ru and its main oxide RuO<sub>2</sub> have comparable electrical resistivities.<ref>{{cite journal |last1=Kwon |first1=Oh-Kyum |last2=Kim |first2=Jae-Hoon |last3=Park |first3=Hyoung-Sang |last4=Kang |first4=Sang-Won |title=Atomic Layer Deposition of Ruthenium Thin Films for Copper Glue Layer |journal=Journal of the Electrochemical Society |date=2004 |volume=151 |issue=2 |pages=G109 |doi=10.1149/1.1640633 |bibcode=2004JElS..151G.109K }}</ref> Copper can be directly electroplated onto ruthenium,<ref>{{cite journal |last1=Moffat |first1=T. P. |last2=Walker |first2=M. |last3=Chen |first3=P. J. |last4=Bonevich |first4=J. E. |last5=Egelhoff |first5=W. F. |last6=Richter |first6=L. |last7=Witt |first7=C. |last8=Aaltonen |first8=T. |last9=Ritala |first9=M. |last10=Leskelä |first10=M. |last11=Josell |first11=D. |title=Electrodeposition of Cu on Ru Barrier Layers for Damascene Processing |journal=Journal of the Electrochemical Society |date=2006 |volume=153 |issue=1 |pages=C37 |doi=10.1149/1.2131826 |bibcode=2006JElS..153C..37M |url=https://zenodo.org/record/1236224 }}</ref> particular applications include [[barrier layer]]s, transistor gates, and interconnects.<ref>{{cite journal |doi=10.1149/2.0281901jes|title=Review—Ruthenium as Diffusion Barrier Layer in Electronic Interconnects: Current Literature with a Focus on Electrochemical Deposition Methods|year=2019|last1=Bernasconi|first1=R.|last2=Magagnin|first2=L.|journal=Journal of the Electrochemical Society|volume=166|issue=1|pages=D3219–D3225|bibcode=2019JElS..166D3219B|s2cid=104430143|doi-access=free}}</ref>  Ru films can be deposited by [[chemical vapor deposition]] using volatile complexes such as [[ruthenium tetroxide]] and the [[organoruthenium compound]] ([[cyclohexadiene]])Ru(CO)<sub>3</sub>.<ref>{{cite journal |doi=10.1134/S106373971001004X|title=Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology|year=2010|last1=Vasilyev|first1=V. Yu.|journal=Russian Microelectronics|volume=39|pages=26–33|s2cid=122854468}}</ref>