Editing EEPROM (section)

===Comparison with EPROM and EEPROM/flash===
The difference between [[EPROM]] and EEPROM lies in the way that the memory programs and erases. EEPROM can be programmed and erased electrically using [[field electron emission]] (more commonly known in the industry as "Fowler–Nordheim tunneling").

EPROMs can't be erased electrically and are programmed by [[hot-carrier injection]] onto the floating gate. Erase is by an [[ultraviolet]] light source, although in practice many EPROMs are encapsulated in plastic that is opaque to UV light, making them "one-time programmable".

Most NOR flash memory is a hybrid style—programming is through [[hot-carrier injection]] and erase is through [[Field_electron_emission#Fowler–Nordheim_tunneling|Fowler–Nordheim tunneling]].

{| class="wikitable"
|- class="hintergrundfarbe6"
! Type
! Inject electrons onto gate<br />(mostly interpreted as bit=0)
! Duration
! Remove electrons from gate<br />(mostly interpreted as bit=1)
! Duration/mode
|-
| EEPROM || field electron emission || 0.1—5 ms, bytewise || field electron emission || 0.1—5 ms, blockwise
|-
| NOR flash memory || hot-carrier injection || 0.01—1 ms || field electron emission || 0.01—1 ms, blockwise
|-
| EPROM  || hot-carrier injection || 3—50 ms, bytewise || ultraviolet light <400nm || 5—30 minutes, whole chip
|-
|}