Editing Semiconductor device fabrication (section)

====Gate oxide and implants====
{{Main| self-aligned gate | doping (semiconductor) }}
Front-end surface engineering is followed by growth of the [[gate dielectric]] (traditionally [[silicon dioxide]]), patterning of the gate, patterning of the source and drain regions, and subsequent implantation or diffusion of dopants to obtain the desired complementary electrical properties. In [[dynamic random-access memory]] (DRAM) devices, storage [[capacitors]] are also fabricated at this time, typically stacked above the access transistor (the now defunct DRAM manufacturer [[Qimonda]] implemented these capacitors with trenches etched deep into the silicon surface).