Editing Photoresist (section)

==Parameters==
{{See also|Exposure latitude}}

Physical, chemical, and optical properties of photoresists influence their selection for different processes.<ref name="auto">{{cite journal |last1=Greener |first1=Jesse |last2=Li |first2=Wei |last3=Ren |first3=Judy |last4=Voicu |first4=Dan |last5=Pakharenko |first5=Viktoriya |last6=Tang |first6=Tian |last7=Kumacheva |first7=Eugenia |title=Rapid, cost-efficient fabrication of microfluidic reactors in thermoplastic polymers by combining photolithography and hot embossing |journal=Lab Chip |language=en |volume=10 |issue=4 |pages=522–524 |pmid=20126695 |s2cid=24567881 |issn=1473-0189 |date=2010-02-02 |doi=10.1039/b918834g |url=https://semanticscholar.org/paper/a8de50cddfad721fdc967fc643920cae01f71ca9}}</ref> The primary properties of the photoresist are resolution capability, process dose and focus [[wikt:latitude|latitude]]<nowiki/>s required for curing, and resistance to reactive ion etching.<ref name=":2">{{cite book |title=Physical properties of polymer handbook |publisher=Springer |others=James E. Mark |isbn=978-0-387-31235-4 |edition=2 |location=New York |oclc=619279219 |date=2006 |url=https://www.worldcat.org/title/619279219}}</ref>{{Rp|page=966}}<ref name=":0">{{citation |last=Lin |first=Qinghuang |title=Properties of Photoresist Polymers |work=Physical Properties of Polymers Handbook |pages=965–979 |editor-last=Mark |editor-first=James E. |place=New York, NY |publisher=Springer New York |language=en |isbn=978-0-387-31235-4 |date=2007 |doi=10.1007/978-0-387-69002-5_57 |url=https://link.springer.com/chapter/10.1007/978-0-387-69002-5_57 |access-date=2023-01-06}}</ref> Other key properties are sensitivity, compatibility with [[tetramethylammonium hydroxide]] (TMAH), adhesion, environmental stability, and shelf life.{{r|:2|page=966|}}<ref name=":0"/>
;Resolution
:Resolution is the ability to differ the neighboring features on the substrate. Critical dimension (CD) is a main measure of resolution. The smaller the CD is, the higher resolution would be.
;Contrast
:Contrast is the difference from exposed portion to unexposed portion. The higher the contrast is, the more obvious the difference between exposed and unexposed portions would be.
;Sensitivity
:Sensitivity is the minimum energy that is required to generate a well-defined feature in the photoresist on the substrate, measured in mJ/cm<sup>2</sup>. The sensitivity of a photoresist is important when using deep ultraviolet (DUV) or extreme-ultraviolet (EUV).
;Viscosity
:Viscosity is a measure of the internal friction of a fluid, affecting how easily it will flow. When it is needed to produce a thicker layer, a photoresist with higher viscosity will be preferred.
;Adherence
:Adherence is the adhesive strength between photoresist and substrate. If the resist comes off the substrate, some features will be missing or damaged.
;Etching resistance
:Anti-etching is the ability of a photoresist to resist the high temperature, different pH environment or the ion bombardment in the process of post-modification.
;Surface tension
:Surface tension is the tension that induced by a liquid tended to minimize its surface area, which is caused by the attraction of the particles in the surface layer. In order to better wet the surface of substrate, photoresists are required to possess relatively low surface tension.