Editing Photodiode (section)

===Pinned photodiode===
{{distinguish|PIN photodiode}}
The pinned photodiode (PPD) has a shallow implant (P+ or N+) in N-type or P-type diffusion layer, respectively, over a P-type or N-type (respectively) substrate layer, such that the intermediate diffusion layer can be fully depleted of majority carriers, like the base region of a [[bipolar junction transistor]].  The PPD (usually PNP) is used in [[CMOS]] [[active-pixel sensor]]s; a precursor NPNP triple junction variant with the MOS buffer capacitor and the back-light illumination scheme with complete charge transfer and no image lag was invented by Sony in 1975. This scheme was widely used in many applications of charge transfer devices.

Early charge-coupled device [[image sensor]]s suffered from [[shutter lag]]. This was largely explained  with the re-invention of the pinned photodiode.<ref name="Fossum2014"/> It was developed by [[Nobukazu Teranishi]], Hiromitsu Shiraki and Yasuo Ishihara at [[NEC]] in 1980.<ref name="Fossum2014"/><ref>{{US patent|4484210|U.S. Patent 4,484,210, which was a floating-surface type buried photodioe with the similar structure of the 1975 Philips invention. Solid-state imaging device having a reduced image lag}}</ref> Sony in 1975 recognized that lag can be eliminated if the signal carriers could be transferred from the photodiode to the CCD. This led to their invention of the pinned photodiode, a photodetector structure with low lag, low [[noise (electronics)|noise]], high [[quantum efficiency]] and low [[dark current (physics)|dark current]].<ref name="Fossum2014"/> It was first publicly reported by Teranishi and Ishihara with A. Kohono, E. Oda and K. Arai in 1982, with the addition of an anti-blooming structure.<ref name="Fossum2014"/><ref>{{cite book |last1=Teranishi |first1=Nobuzaku |author1-link=Nobukazu Teranishi |last2=Kohono |first2=A. |last3=Ishihara |first3=Yasuo |last4=Oda |first4=E. |last5=Arai |first5=K. |title=1982 International Electron Devices Meeting |chapter=No image lag photodiode structure in the interline CCD image sensor |date=December 1982 |pages=324–327 |doi=10.1109/IEDM.1982.190285|s2cid=44669969 }}</ref> The new photodetector structure invented by Sony in 1975, developed by NEC in 1982 by Kodak in 1984 was given the name "pinned photodiode" (PPD) by B.C. Burkey at Kodak in 1984. In 1987, the PPD began to be incorporated into most CCD sensors, becoming a fixture in [[consumer electronic]] [[video cameras]] and then [[digital still camera]]s.<ref name="Fossum2014"/>

A CMOS image sensor with a low-voltage-PPD technology was first fabricated in 1995 by a joint JPL and [[Kodak]] team. The CMOS sensor with PPD technology was further advanced and refined by R.M. Guidash in 1997, K. Yonemoto and H. Sumi in 2000, and I. Inoue in 2003. This led to CMOS sensors achieve imaging performance on par with CCD sensors, and later exceeding CCD sensors.