Editing Insulated-gate bipolar transistor (section)

==IGBT failure assessment==
Failure assessment of IGBTs is becoming a topic of interest for [[predictive maintenance]] in several applications where IGBTs are widely used such as transportation, telecommunication, and computers. It is particularly challenging given the difficult nature of the problem from a physical and a statistical point of view. [[Physics of failure]] are yet to be proven to generalize well to IGBTs, whereas [[data-driven]] models require high-quality data of IGBT failures that is often costly to obtain. Given these challenges, most state-of-the-art failure assessment models utilise hybrid approaches which combine physics-of-failure and data-driven models.<ref>{{cite conference |last1=Ghrabli |first1=Mehdi|last2=Bouarroudj |first2=Mounira | author3=Chamoin, Ludovic|author4=Aldea, Emanuel |date=2024 |title=Hybrid modeling for remaining useful life prediction in power module prognosis |url=https://ieeexplore.ieee.org/document/10491493 |conference=2024 25th International Conference on Thermal Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)|location=Catania, Italy |publisher=IEEE|doi=10.1109/EuroSimE60745.2024.10491493  }}</ref><ref>{{ cite journal | title=Physics-informed Markov chains for remaining useful life prediction of wire bonds in power electronic modules | journal=Microelectronics Reliability | year=2025 | last1=Ghrabli | author2=Bouarroudj, Mounira | author3=Chamoin, Ludovic|author4=Aldea, Emanuel | volume=167 | pages=1–12 | first1=Mehdi | doi=10.1016/j.microrel.2025.115644| doi-access=free | bibcode=2025MiRe..16715644G }}</ref>