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=== Confinement of individual electrons === Individual electrons can now be easily confined in ultra small ({{nowrap|1=''L'' = 20 nm}}, {{nowrap|1=''W'' = 20 nm}}) CMOS transistors operated at cryogenic temperature over a range of about 4 [[kelvin|K]] (β269 Β°C) to 15 [[kelvin|K]] (β258 Β°C).<ref> {{cite journal | last1 = Prati | first1 = E. | last2 = De Michielis | first2 = M. | last3 = Belli | first3 = M. | last4 = Cocco | first4 = S. | last5 = Fanciulli | first5 = M. | last6 = Kotekar-Patil | first6 = D. | last7 = Ruoff | first7 = M. | last8 = Kern | first8 = D.P. | last9 = Wharam | first9 = D.A. | last10 = Verduijn | first10 = J. | last11 = Tettamanzi | first11 = G.C. | last12 = Rogge | first12 = S. | last13 = Roche | first13 = B. | last14 = Wacquez | first14 = R. | last15 = Jehl | first15 = X. | last16 = Vinet | first16 = M. | last17 = Sanquer | first17 = M. | title = Few electron limit of n-type metal oxide semiconductor single electron transistors | journal = Nanotechnology | volume = 23 | issue = 21 | pages = 215204 | year = 2012 | doi = 10.1088/0957-4484/23/21/215204 | pmid = 22552118 |arxiv = 1203.4811 | bibcode = 2012Nanot..23u5204P | citeseerx = 10.1.1.756.4383 | s2cid = 206063658 }}</ref> The electron wavefunction spreads in a semiconductor lattice and negligibly interacts with the valence band electrons, so it can be treated in the single particle formalism, by replacing its mass with the [[effective mass (solid-state physics)|effective-mass tensor]].
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