Editing Static random-access memory (section)

==History==
Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at [[Fairchild Semiconductor]].<ref>{{cite web |title=1966: Semiconductor RAMs Serve High-speed Storage Needs |url=https://www.computerhistory.org/siliconengine/semiconductor-rams-serve-high-speed-storage-needs/ |website=[[Computer History Museum]] |access-date=19 June 2019}}</ref> [[Metal–oxide–semiconductor]] SRAM (MOS-SRAM) was invented in 1964 by John Schmidt at Fairchild Semiconductor. The first device was a 64-bit MOS p-channel SRAM.<ref>{{cite web |title=1970: MOS dynamic RAM competes with magnetic core memory on price|url=https://www.computerhistory.org/siliconengine/mos-dynamic-ram-competes-with-magnetic-core-memory-on-price/ |website=[[Computer History Museum]]}}</ref><ref>{{cite web |title=Memory lectures|url=https://faculty.kfupm.edu.sa/COE/mudawar/coe501/lectures/05-MainMemory.pdf}}</ref>

SRAM was the main driver behind any new [[CMOS]]-based technology fabrication process since the 1960s, when CMOS was invented.<ref name=":0">{{Cite web|last=Walker|first=Andrew|date=December 17, 2018|title=The Trouble with SRAM|url=https://www.eetimes.com/the-trouble-with-sram/|work=[[EE Times]]}}</ref>

In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a [[transistor]] gate and [[tunnel diode]] [[Flip-flop (electronics)|latch]]. They replaced the latch with two transistors and two [[resistor]]s, a configuration that became known as the Farber-Schlig cell. That year they submitted an invention disclosure, but it was initially rejected.<ref>{{cite patent |country=US |number=3354440A |invent1=Arnold S. Farber |invent2=Eugene S. Schlig |assign1=IBM |title=Nondestructive memory array |gdate=1967-11-21}}{{dead link|date=January 2024}}</ref><ref>{{cite book | author1= Emerson W. Pugh | author2= Lyle R. Johnson | author3= John H. Palmer | title=IBM's 360 and Early 370 Systems | year=1991 | page=462 |publisher=MIT Press | isbn=9780262161237 | url=https://books.google.com/books?id=MFGj_PT_clIC}}</ref> In 1965, Benjamin Agusta and his team at IBM created a 16-bit silicon memory chip based on the Farber-Schlig cell, with 84 transistors, 64 resistors, and 4 diodes.

In April 1969, Intel Inc. introduced its first product, Intel 3101, a SRAM memory chip intended to replace bulky [[magnetic-core memory]] modules; Its capacity was 64 bits{{efn|In the first versions, only 63 bits were usable due to a bug.}}<ref>{{Cite journal |last1=Volk |first1=Andrew M. |last2=Stoll |first2=Peter A. |last3=Metrovich |first3=Paul |date=First Quarter 2001 |title=Recollections of Early Chip Development at Intel |url=https://www.intel.com/content/dam/www/public/us/en/documents/research/2001-vol05-iss-1-intel-technology-journal.pdf#page=11 |journal=Intel Technology Journal |volume=5 |issue=1 |pages=11 |via=Intel}}</ref> and was based on [[bipolar junction transistor]]s.<ref name=":2">{{Cite web |date=2018-05-14 |title=Intel at 50: Intel's First Product – the 3101 |url=https://newsroom.intel.com/news/intel-at-50-intels-first-product-3101/ |url-status=dead |archive-url=https://web.archive.org/web/20230201231900/https://newsroom.intel.com/news/intel-at-50-intels-first-product-3101/ |archive-date=2023-02-01 |access-date=2023-02-01 |website=Intel Newsroom |language=en-US}}</ref> It was designed by using [[rubylith]].<ref>{{Citation |title=Intel 64 bit static RAM rubylith : 6 |date=c. 1970 |url=https://www.computerhistory.org/collections/catalog/102718783 |access-date=2023-01-28}}</ref>